Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors

We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/s...

Celý popis

Uloženo v:

Podrobná bibliografie
Vydáno v:	IEEE Transactions on Electron Devices Ročník 52; číslo 7; s. 1497 - 1503
Hlavní autoři:	Shea, P.B., Johnson, A.R., Ono, N., Kanicki, J.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York, NY IEEE 01.07.2005 Institute of Electrical and Electronics Engineers (IEEE) Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Absorbance Applied sciences Charge carrier mobility cyclic voltammetry Devices Drains Electrical properties Electrodes Electronics Energy bands Exact sciences and technology FETs Molecular electronics Organic compounds organic field-effect transistors (OFETs) porphyrins Semiconductor device testing Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution processing staggered electrodes Thin film transistors Thin films Transistors Performance evaluation Voltage threshold organic field-effect transistors (OFETs) staggered electrodes Polycrystal Energy band Energy diagram porphyrins Thin film Field effect transistor Cyclic voltammetry Absorbance solution processing Electronic component Organic semiconductors Thin film transistor Electrical characteristic
ISSN:	0018-9383, 1557-9646
On-line přístup:	Získat plný text
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!

Abstract	We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/sup 2//V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 10/sup 5/. The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed.
AbstractList	We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10 super(-2) cm super(2)/V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 10 super(5). The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed. We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/sup 2//V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 10/sup 5/. The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed.
Author	Shea, P.B. Kanicki, J. Johnson, A.R. Ono, N.
Author_xml	– sequence: 1 givenname: P.B. surname: Shea fullname: Shea, P.B. organization: Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA – sequence: 2 givenname: A.R. surname: Johnson fullname: Johnson, A.R. organization: Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA – sequence: 3 givenname: N. surname: Ono fullname: Ono, N. – sequence: 4 givenname: J. surname: Kanicki fullname: Kanicki, J.
BackLink	https://cir.nii.ac.jp/crid/1873398393049120896$$DView record in CiNii http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16896778$$DView record in Pascal Francis
BookMark	eNp9kTtvFDEUhS0UJDaBmoJmhABRZDZ-j12isDykSDShHnm918GRMx5sb7EU_HbuMhFIkaCxZfk75z7OKTmZ8gSEPGd0zRi1F9eb92tOqVobRTXTj8iKKTX0Vkt9QlaUMtNbYcQTclrrLT61lHxFfm4S-Faid6mbS56htAi1y6Grzd3cQIFdB7-RvIPzrua0bzFPPbIeaoXdeTfndPDlgHxKcYKuQStuC9OPPOcyfzuUOHUhQtr1EAI6dfg91VhbLvUpeRxcqvDs_j4jXz9sri8_9VdfPn6-fHfVezkMrbfOeKuE497sKLN-C4IzrbaM68FILnjAgtRZKYWxwrngOAuGMqE82C0bxBl5s_hi39_3UNt4F6uHlNwEeV9HjrBS0iL49r8g0wOTlHLFEH35AL3N-zLhGKPRgzSGU47Q63vIVdxxwNF9rONc4p0rB7QzVg-DQU4tnC-51gJh9LG546pxWzGNjI7HlEdMeTymPC4po-7ige6P9T8VrxbFFCMWOZ7MDEJYI6yg0jJOsSfEXixYBIC_plJZdBW_AOoMwCQ
CODEN	IETDAI
CitedBy_id	crossref_primary_10_1002_ejoc_200700014 crossref_primary_10_1109_TED_2010_2044272 crossref_primary_10_1021_jo800509k crossref_primary_10_1016_j_orgel_2008_02_005 crossref_primary_10_1016_j_synthmet_2007_01_013 crossref_primary_10_1016_j_tsf_2012_01_034 crossref_primary_10_1063_1_2115077 crossref_primary_10_1063_1_3699371 crossref_primary_10_1039_b719964c crossref_primary_10_1070_RC2013v082n05ABEH004317 crossref_primary_10_1063_1_2745227 crossref_primary_10_1134_S107042801811009X crossref_primary_10_1063_1_2220641 crossref_primary_10_1142_S1088424607000436 crossref_primary_10_1002_chem_200900755 crossref_primary_10_1016_j_cplett_2011_02_016 crossref_primary_10_1016_j_snb_2011_06_030 crossref_primary_10_3390_nano13111750 crossref_primary_10_1016_j_synthmet_2009_11_040 crossref_primary_10_1016_j_orgel_2019_105424
Cites_doi	10.1016/S0379-6779(97)80881-8 10.1016/S0379-6779(02)01308-5 10.1021/cm049613r 10.1063/1.1613369 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U 10.1063/1.1666994 10.1149/1.2221149 10.1002/adma.19940061204 10.1103/PhysRevLett.86.3867 10.1016/S0009-2614(98)01277-9 10.1557/PROC-771-L6.2 10.1103/PhysRevB.57.12964 10.1002/adma.200305393 10.1002/pssa.200404334 10.1002/pssa.200404335 10.1063/1.361071 10.1063/1.1949713 10.1063/1.1512950 10.1002/adma.19950070608 10.1139/v03-175 10.1021/ja035143a 10.1063/1.122479 10.1021/j100217a009 10.1109/16.40955 10.1063/1.1431691 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W 10.1002/adfm.200390006 10.1002/0471213748 10.1063/1.1415374 10.1021/ja0266621 10.1002/0470068329 10.1002/(SICI)1521-4095(199904)11:6<480::AID-ADMA480>3.0.CO;2-U 10.1201/9780203911778.ch3 10.1103/PhysRev.54.647 10.1147/rd.451.0011 10.1063/1.367030
ContentType	Journal Article
Copyright	2005 INIST-CNRS Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005
Copyright_xml	– notice: 2005 INIST-CNRS – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005
DBID	97E RIA RIE RYH AAYXX CITATION IQODW 7SP 8FD L7M F28 FR3 7U5
DOI	10.1109/TED.2005.850616
DatabaseName	IEEE All-Society Periodicals Package (ASPP) 2005–Present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE/IET Electronic Library (IEL) CiNii Complete CrossRef Pascal-Francis Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Engineering Research Database Solid State and Superconductivity Abstracts
DatabaseTitle	CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Engineering Research Database ANTE: Abstracts in New Technology & Engineering Solid State and Superconductivity Abstracts
DatabaseTitleList	Engineering Research Database Solid State and Superconductivity Abstracts
Database_xml	– sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://ieeexplore.ieee.org/ sourceTypes: Publisher
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering Applied Sciences
EISSN	1557-9646
EndPage	1503
ExternalDocumentID	2351518601 16896778 10_1109_TED_2005_850616 1459110
Genre	orig-research
GroupedDBID	-~X .DC 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX AGQYO AGSQL AHBIQ AI. AIBXA AKJIK AKQYR ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RNS TAE TN5 VH1 VJK VOH RYH AAYXX CITATION IQODW RIG 7SP 8FD L7M F28 FR3 7U5
ID	FETCH-LOGICAL-c477t-9a8c953a2c8d019cbe32165b126784232fabe0a9443893aafa21f80135ce9b173
IEDL.DBID	RIE
ISICitedReferencesCount	28
ISICitedReferencesURI	http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000230123100029&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN	0018-9383
IngestDate	Sun Nov 09 09:09:57 EST 2025 Sun Nov 09 11:24:02 EST 2025 Mon Jun 30 06:38:05 EDT 2025 Mon Jul 21 09:13:58 EDT 2025 Tue Nov 18 22:39:02 EST 2025 Sat Nov 29 08:03:26 EST 2025 Mon Nov 10 09:19:47 EST 2025 Tue Aug 26 16:40:04 EDT 2025
IsPeerReviewed	true
IsScholarly	true
Issue	7
Keywords	Performance evaluation Voltage threshold organic field-effect transistors (OFETs) staggered electrodes Polycrystal Energy band Energy diagram porphyrins Thin film Field effect transistor Cyclic voltammetry Absorbance solution processing Electronic component Organic semiconductors Thin film transistor Electrical characteristic
Language	English
License	https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html CC BY 4.0
LinkModel	DirectLink
MergedId	FETCHMERGED-LOGICAL-c477t-9a8c953a2c8d019cbe32165b126784232fabe0a9443893aafa21f80135ce9b173
Notes	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 14 ObjectType-Article-1 ObjectType-Feature-2 content type line 23
ORCID	0000-0002-3649-8360
PQID	867488202
PQPubID	23500
PageCount	7
ParticipantIDs	ieee_primary_1459110 pascalfrancis_primary_16896778 crossref_citationtrail_10_1109_TED_2005_850616 proquest_miscellaneous_28015549 crossref_primary_10_1109_TED_2005_850616 proquest_miscellaneous_1671400251 nii_cinii_1873398393049120896 proquest_journals_867488202
PublicationCentury	2000
PublicationDate	2005-07-01
PublicationDateYYYYMMDD	2005-07-01
PublicationDate_xml	– month: 07 year: 2005 text: 2005-07-01 day: 01
PublicationDecade	2000
PublicationPlace	New York, NY
PublicationPlace_xml	– name: New York, NY – name: New York
PublicationTitle	IEEE Transactions on Electron Devices
PublicationTitleAbbrev	TED
PublicationYear	2005
Publisher	IEEE Institute of Electrical and Electronics Engineers (IEEE) Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml	– name: IEEE – name: Institute of Electrical and Electronics Engineers (IEEE) – name: Institute of Electrical and Electronics Engineers – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
References	ref13 ref35 ref12 ref34 ref15 ref14 ref31 ref30 ref33 ref10 ref32 ref2 ref1 ref17 ref16 ref38 ref19 ref18 ref24 ref23 ref26 ref25 ref20 ref22 ref21 ref28 ref27 ref29 Bhattacharya (ref36) 1997 ref8 ref7 ref9 ref4 ref3 ref6 ref5 Roichman (ref11) 2001; 79
References_xml	– ident: ref8 doi: 10.1016/S0379-6779(97)80881-8 – ident: ref4 doi: 10.1016/S0379-6779(02)01308-5 – ident: ref30 doi: 10.1021/cm049613r – volume-title: Semiconductor Optoelectronic Devices year: 1997 ident: ref36 – ident: ref17 doi: 10.1063/1.1613369 – ident: ref25 doi: 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U – ident: ref6 doi: 10.1063/1.1666994 – ident: ref28 doi: 10.1149/1.2221149 – ident: ref31 doi: 10.1002/adma.19940061204 – ident: ref15 doi: 10.1103/PhysRevLett.86.3867 – ident: ref16 doi: 10.1016/S0009-2614(98)01277-9 – ident: ref22 doi: 10.1557/PROC-771-L6.2 – ident: ref23 doi: 10.1103/PhysRevB.57.12964 – ident: ref10 doi: 10.1002/adma.200305393 – ident: ref7 doi: 10.1002/pssa.200404334 – ident: ref27 doi: 10.1002/pssa.200404335 – ident: ref1 doi: 10.1063/1.361071 – ident: ref9 doi: 10.1063/1.1949713 – ident: ref13 doi: 10.1063/1.1512950 – ident: ref20 doi: 10.1002/adma.19950070608 – ident: ref34 doi: 10.1139/v03-175 – ident: ref5 doi: 10.1021/ja035143a – ident: ref32 doi: 10.1063/1.122479 – ident: ref33 doi: 10.1021/j100217a009 – ident: ref18 doi: 10.1109/16.40955 – ident: ref12 doi: 10.1063/1.1431691 – ident: ref24 doi: 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W – ident: ref29 doi: 10.1002/adfm.200390006 – ident: ref35 doi: 10.1002/0471213748 – volume: 79 start-page: 2987 year: 2001 ident: ref11 article-title: Two-dimensional simulation of polymer field-effect transistor publication-title: Appl. Phys. Lett. doi: 10.1063/1.1415374 – ident: ref3 doi: 10.1021/ja0266621 – ident: ref21 doi: 10.1002/0470068329 – ident: ref2 doi: 10.1002/(SICI)1521-4095(199904)11:6<480::AID-ADMA480>3.0.CO;2-U – ident: ref19 doi: 10.1201/9780203911778.ch3 – ident: ref38 doi: 10.1103/PhysRev.54.647 – ident: ref26 doi: 10.1147/rd.451.0011 – ident: ref14 doi: 10.1063/1.367030
SSID	ssj0016442 ssib004836687 ssib006542112 ssib006542111 ssib017384893
Score	1.9231495
Snippet	We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with...
SourceID	proquest pascalfrancis crossref nii ieee
SourceType	Aggregation Database Index Database Enrichment Source Publisher
StartPage	1497
SubjectTerms	Absorbance Applied sciences Charge carrier mobility cyclic voltammetry Devices Drains Electrical properties Electrodes Electronics Energy bands Exact sciences and technology FETs Molecular electronics Organic compounds organic field-effect transistors (OFETs) porphyrins Semiconductor device testing Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution processing staggered electrodes Thin film transistors Thin films Transistors
Title	Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors
URI	https://ieeexplore.ieee.org/document/1459110 https://cir.nii.ac.jp/crid/1873398393049120896 https://www.proquest.com/docview/867488202 https://www.proquest.com/docview/1671400251 https://www.proquest.com/docview/28015549
Volume	52
WOSCitedRecordID	wos000230123100029&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
journalDatabaseRights	– providerCode: PRVIEE databaseName: IEEE Electronic Library (IEL) customDbUrl: eissn: 1557-9646 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0016442 issn: 0018-9383 databaseCode: RIE dateStart: 19630101 isFulltext: true titleUrlDefault: https://ieeexplore.ieee.org/ providerName: IEEE
link	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9QwEB6VigMceBVEKC1G4sBh3cZ5rO0jQq04VRxA6i2yHbtaqUpWSRapHPjtzNjZbRH0wCWKFFt2PB7P2DP-PoAPy7q1srCCW9eWvCp9y41VgQvhg6vrEPK2imQT8uJCXV7qr3uw2N2F8d7H5DN_Qq8xlt_2bkNHZaeiqlE3cYP-QEqZ7mrtIgZo1xMyuEAFxm3XDOMjcn2KS0A6PCF0NiI2v2OBIqUK2pVutaK0SDPiyIREafHX6hxNzvnT_-vsM3gyu5bsU5oLz2HPdy_g8R3AwQP4dRZZb0gwbE3H8APhqbI-MHQSr66It5PNxDitX7DtvOTrdJ3Atwu27q9v3HCD5QnN27PJT4OxvvvZoyePMsOGWEyL4ylVhE1kDSMYyfgSvp-fffv8hc8MDNxVUk5cG-V0XZrCqRZ9QWd9WYhlbUWBNo5CvAEbyI2uiEO9NCaYQgS0eWXtvLZClq9gv-s7_xqYVkWCtxcuVM541SojcYAILsbWy5DByVYqjZvhyYkl47qJ25RcNyhGIs2smyTGDD7uKqwTMsf9RQ9IPrfFkmgyOEKxY2v0FEqWpUZ3keKOosiVxmrHf0yI2_pL_CqlyuBwO0OaWfXHRhF9C_5skcH73VfUWQrEmM73mxHrE0wi7e4yeHdPmUKRN1vpN__u-yE8iiCyMXH4LexPw8YfwUP3Y1qNw3FUjd9_hgzy
linkProvider	IEEE
linkToHtml	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Nb9QwEB1VBQk48FUqQmlrJA4cNm3sxBv7iFCrIsqKQ5F6ixzHrlaqktUmi1QO_HZm7Oy2CHrgEkWKLTsej2fsGb8H8H4qm7oUNU9r2-RpkbsmNbXyKefOWym9z5oikE2Us5m6vNTftmCyuQvjnAvJZ-6IXkMsv-nsio7KjnkhUTdxg_5AFoXg8bbWJmaAlj1ig3NUYdx4jUA-PNPHuAjE4xPCZyNq8zs2KJCqoGVp53NKjDQ9jo2PpBZ_rc_B6Jw--7_uPoeno3PJPsbZ8AK2XPsSntyBHNyBXyeB94ZEwxZ0EL8kRFXWeYZu4tUVMXeykRqncRO2npnpIl4ocM2ELbrrG7u8wfKE5-3Y4IalqV37s0NfHqWGDbGQGJfGZBE2kD0McCT9K_h-enLx6SwdORhSW5TlkGqjrJa5EVY16A3a2uWCT2XNBVo5CvJ6bCAzuiAW9dwYbwT3aPVyaZ2ueZnvwnbbte41MK1EBLjn1hfWONUoU-IAEWBMLac-gaO1VCo7ApQTT8Z1FTYqma5QjESbKasoxgQ-bCosIjbH_UV3SD63xaJoEthHsWNr9OSqzHONDiNFHrnIlMZqB39MiNv6U_xaliqBvfUMqUbl7ytFBC74syKBd5uvqLUUijGt61Y91iegRNrfJXB4TxmhyJ8t9Jt_9_0QHp1dfD2vzj_PvuzB4wApG9KI38L2sFy5fXhofwzzfnkQ1OQ3l6sQOQ
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Electrical+properties+of+staggered+electrode%2C+solution-processed%2C+polycrystalline+tetrabenzoporphyrin+field-effect+transistors&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Shea%2C+P+B&rft.au=Johnson%2C+A+R&rft.au=Ono%2C+N&rft.au=Kanicki%2C+J&rft.date=2005-07-01&rft.issn=0018-9383&rft.volume=52&rft.issue=7&rft_id=info:doi/10.1109%2FTED.2005.850616&rft.externalDBID=NO_FULL_TEXT
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon