Role of Spin-Orbit Coupling and Hybridization Effects in the Electronic Structure of Ultrathin Bi Films

The electronic structure of Bi(001) ultrathin films (thickness > or =7 bilayers) on Si(111)-7x7 was studied by angle-resolved photoemission spectroscopy and first-principles calculations. In contrast with the semimetallic nature of bulk Bi, both the experiment and theory demonstrate the metallic...

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Veröffentlicht in:Physical review letters Jg. 97; H. 14; S. 146803
Hauptverfasser: Hirahara, T., Nagao, T., Matsuda, I., Bihlmayer, G., Chulkov, E. V., Koroteev, Yu. M., Echenique, P. M., Saito, M., Hasegawa, S.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: United States 06.10.2006
ISSN:0031-9007, 1079-7114
Online-Zugang:Volltext
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Zusammenfassung:The electronic structure of Bi(001) ultrathin films (thickness > or =7 bilayers) on Si(111)-7x7 was studied by angle-resolved photoemission spectroscopy and first-principles calculations. In contrast with the semimetallic nature of bulk Bi, both the experiment and theory demonstrate the metallic character of the films with the Fermi surface formed by spin-orbit-split surface states (SSs) showing little thickness dependence. Below the Fermi level, we clearly detected quantum well states (QWSs) at the M point, which were surprisingly found to be non-spin-orbit split; the films are "electronically symmetric" despite the obvious structural nonequivalence of the top and bottom interfaces. We found that the SSs hybridize with the QWSs near M and lose their spin-orbit-split character.
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ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.97.146803