Efficiency droop in nitride-based light-emitting diodes

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Several explana...

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Vydáno v:Physica status solidi. A, Applications and materials science Ročník 207; číslo 10; s. 2217 - 2225
Hlavní autor: Piprek, Joachim
Médium: Journal Article
Jazyk:angličtina
Vydáno: Berlin WILEY-VCH Verlag 01.10.2010
WILEY‐VCH Verlag
Wiley-VCH
Témata:
Applied sciences
Auger recombination
efficiency droop
Electronics
Exact sciences and technology
GaN
light-emitting diodes
Optoelectronic devices
quantum efficiency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Band structure
Electron-hole recombination
Spontaneous emission
Radiative recombination
Defect
Mathematical model
Quantum yield
Gallium nitride
Auger recombination
Light emitting diode
ISSN:1862-6300, 1862-6319
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Popis
Shrnutí:Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely accepted. This feature article provides a snapshot of the present state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop. Illustration of LED efficiency droop (details in Fig. 13).
Bibliografie:ArticleID:PSSA201026149
ark:/67375/WNG-FKXV6Z51-X
istex:F6A0EB9EE831E459EB5288D428D4814EED1A5868
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201026149