Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values

Mg 3 (Sb,Bi) 2 is a promising thermoelectric material suited for electronic cooling, but there is still room to optimize its low-temperature performance. This work realizes >200% enhancement in room-temperature zT by incorporating metallic inclusions (Nb or Ta) into the Mg 3 (Sb,Bi) 2 -based matr...

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Vydáno v:Nature communications Ročník 14; číslo 1; s. 7428 - 9
Hlavní autoři: Li, Jing-Wei, Han, Zhijia, Yu, Jincheng, Zhuang, Hua-Lu, Hu, Haihua, Su, Bin, Li, Hezhang, Jiang, Yilin, Chen, Lu, Liu, Weishu, Zheng, Qiang, Li, Jing-Feng
Médium: Journal Article
Jazyk:angličtina
Vydáno: London Nature Publishing Group UK 16.11.2023
Nature Publishing Group
Nature Portfolio
Témata:
147/137
639/301/119/1000
639/301/299/2736
Antimony
Bismuth
Carrier transport
Electrical conductivity
Electrical resistivity
Grain boundaries
High temperature
Humanities and Social Sciences
Inclusions
Low temperature
multidisciplinary
Nanocomposites
Performance enhancement
Power factor
Room temperature
Science
Science (multidisciplinary)
Seebeck effect
Temperature
Thermal conductivity
Thermoelectric materials
Thermoelectricity
ISSN:2041-1723, 2041-1723
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Shrnutí:Mg 3 (Sb,Bi) 2 is a promising thermoelectric material suited for electronic cooling, but there is still room to optimize its low-temperature performance. This work realizes >200% enhancement in room-temperature zT by incorporating metallic inclusions (Nb or Ta) into the Mg 3 (Sb,Bi) 2 -based matrix. The electrical conductivity is boosted in the range of 300–450 K, whereas the corresponding Seebeck coefficients remain unchanged, leading to an exceptionally high room-temperature power factor >30 μW cm −1 K −2 ; such an unusual effect originates mainly from the modified interfacial barriers. The reduced interfacial barriers are conducive to carrier transport at low and high temperatures. Furthermore, benefiting from the reduced lattice thermal conductivity, a record-high average zT  > 1.5 and a maximum zT of 2.04 at 798 K are achieved, resulting in a high thermoelectric conversion efficiency of 15%. This work demonstrates an efficient nanocomposite strategy to enhance the wide-temperature-range thermoelectric performance of n-type Mg 3 (Sb,Bi) 2 , broadening their potential for practical applications. The utilization of Mg 3 (Sb,Bi) 2 in thermoelectric devices is hindered by its low performance near room temperature. Here, authors report thermoelectric performance enhancement of Mg 3 (Sb,Bi) 2 within a wide temperature range by incorporating metallic inclusions at grain boundaries. (279 in total)
Bibliografie:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-43228-9