Determining grain resolved stresses in polycrystalline materials using three-dimensional X-ray diffraction

An algorithm is presented for characterization of the grain resolved (type II) stress states in a polycrystalline sample based on monochromatic X‐ray diffraction data. The algorithm is a robust 12‐parameter‐per‐grain fit of the centre‐of‐mass grain positions, orientations and stress tensors includin...

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Vydáno v:Journal of applied crystallography Ročník 43; číslo 3; s. 539 - 549
Hlavní autoři: Oddershede, Jette, Schmidt, Søren, Poulsen, Henning Friis, Sørensen, Henning Osholm, Wright, Jonathan, Reimers, Walter
Médium: Journal Article
Jazyk:angličtina
Vydáno: 5 Abbey Square, Chester, Cheshire CH1 2HU, England International Union of Crystallography 01.06.2010
Blackwell Publishing Ltd
Témata:
Algorithms
computer programs
Crystallography
Diffraction
Errors
Experiments
Grains
Orientation
polycrystalline materials
Shear
Simulation
Stresses
three-dimensional X-ray diffraction
X-ray diffraction
X-rays
ISSN:1600-5767, 0021-8898, 1600-5767
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Shrnutí:An algorithm is presented for characterization of the grain resolved (type II) stress states in a polycrystalline sample based on monochromatic X‐ray diffraction data. The algorithm is a robust 12‐parameter‐per‐grain fit of the centre‐of‐mass grain positions, orientations and stress tensors including error estimation and outlier rejection. The algorithm is validated by simulations and by two experiments on interstitial free steel. In the first experiment, using only a far‐field detector and a rotation range of 2 × 110°, 96 grains in one layer were monitored during elastic loading and unloading. Very consistent results were obtained, with mean resolutions for each grain of approximately 10 µm in position, 0.05° in orientation, and 8, 20 and 13 × 10−5 in the axial, normal and shear components of the strain, respectively. The corresponding mean deviations in stress are 30, 50 and 15 MPa in the axial, normal and shear components, respectively, though some grains may have larger errors. In the second experiment, where a near‐field detector was added, ∼2000 grains were characterized with a positional accuracy of 3 µm.
Bibliografie:ArticleID:JCRKS5240
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ObjectType-Feature-1
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ISSN:1600-5767
0021-8898
1600-5767
DOI:10.1107/S0021889810012963