Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory

This paper presents a coding scheme based on bilayer low-density parity-check (LDPC) codes for multi-level cell (MLC) NAND flash memory. The main feature of the proposed scheme is that it exploits the asymmetric properties of an MLC flash channel and stores the extra parity-check bits in the lower p...

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Vydané v:Entropy (Basel, Switzerland) Ročník 26; číslo 1; s. 54
Hlavní autori: Kong, Lingjun, Liu, Haiyang, Hou, Wentao, Meng, Chao
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Switzerland MDPI AG 01.01.2024
Predmet:
Algorithms
Analysis
bilayer low-density parity-check (LDPC) codes
Codes
Decoding
Design
Error correcting codes
Error correction
Error correction & detection
Flash memory
Flash memory (computers)
genetic algorithm (GA)
Genetic algorithms
Information storage
Low density parity check codes
multi-level cell (MLC)
NAND flash memory
Noise
Parity
Performance enhancement
Perturbation
perturbation noise
Signal processing
NAND flash memory
genetic algorithm (GA)
multi-level cell (MLC)
perturbation noise
bilayer low-density parity-check (LDPC) codes
ISSN:1099-4300, 1099-4300
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Shrnutí:This paper presents a coding scheme based on bilayer low-density parity-check (LDPC) codes for multi-level cell (MLC) NAND flash memory. The main feature of the proposed scheme is that it exploits the asymmetric properties of an MLC flash channel and stores the extra parity-check bits in the lower page, which are activated only after the decoding failure of the upper page. To further improve the performance of the error correction, a perturbation process based on the genetic algorithm (GA) is incorporated into the decoding process of the proposed coding scheme, which can convert uncorrectable read sequences into error-correctable regions of the corresponding decoding space by introducing GA-trained noises. The perturbation decoding process is particularly efficient at low program-and-erase (P/E) cycle regions. The simulation results suggest that the proposed bilayer LDPC coding scheme can extend the lifetime of MLC NAND flash memory up to 10,000 P/E cycles. The proposed scheme can achieve a better balance between performance and complexity than traditional single LDPC coding schemes. All of these findings indicate that the proposed coding scheme is suitable for practical purposes in MLC NAND flash memory.
Bibliografia:ObjectType-Article-1
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ISSN:1099-4300
1099-4300
DOI:10.3390/e26010054