Carrier Transport Properties of p-Type Silicon–Metal Silicide Nanocrystal Composite Films

In this study, we synthesized p -type nanocomposite films consisting of Si–nickel silicide and Si–molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into...

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Vydané v:	Journal of electronic materials Ročník 44; číslo 6; s. 2074 - 2079
Hlavní autori:	Ohishi, Yuji, Miyazaki, Yoshinobu, Muta, Hiroaki, Kurosaki, Ken, Yamanaka, Shinsuke, Uchida, Noriyuki, Tada, Tetsuya
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York Springer US 01.06.2015 Springer Nature B.V
Predmet:	Alloys Characterization and Evaluation of Materials Chemistry and Materials Science Electric properties Electronics and Microelectronics Heat conductivity Instrumentation Materials Science Nanocomposites Optical and Electronic Materials Solid State Physics nanocomposite metal silicide carrier transport property potential barrier thermoelectric property Type silicon
ISSN:	0361-5235, 1543-186X
On-line prístup:	Získať plný text
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