Carrier Transport Properties of p-Type Silicon–Metal Silicide Nanocrystal Composite Films

In this study, we synthesized p -type nanocomposite films consisting of Si–nickel silicide and Si–molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into...

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Veröffentlicht in:Journal of electronic materials Jg. 44; H. 6; S. 2074 - 2079
Hauptverfasser: Ohishi, Yuji, Miyazaki, Yoshinobu, Muta, Hiroaki, Kurosaki, Ken, Yamanaka, Shinsuke, Uchida, Noriyuki, Tada, Tetsuya
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York Springer US 01.06.2015
Springer Nature B.V
Schlagworte:
Alloys
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electric properties
Electronics and Microelectronics
Heat conductivity
Instrumentation
Materials Science
Nanocomposites
Optical and Electronic Materials
Solid State Physics
nanocomposite
metal silicide
carrier transport property
potential barrier
thermoelectric property
Type silicon
ISSN:0361-5235, 1543-186X
Online-Zugang:Volltext
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Zusammenfassung:In this study, we synthesized p -type nanocomposite films consisting of Si–nickel silicide and Si–molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into account the effect of ionized impurities, acoustic phonons, and grain boundaries. The potential barrier height was sufficiently low not to substantially affect carrier transport in the Si–nickel silicide composite film. Carrier transport in the Si–molybdenum silicide composite film was found to be affected by a scattering mechanism not included in this model. Thus, the transition metal significantly affects carrier transport and the thermoelectric properties of Si–metal silicide nanocomposite films.
Bibliographie:SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 14
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-015-3663-2