Carrier Transport Properties of p-Type Silicon–Metal Silicide Nanocrystal Composite Films

In this study, we synthesized p -type nanocomposite films consisting of Si–nickel silicide and Si–molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into...

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Vydané v:	Journal of electronic materials Ročník 44; číslo 6; s. 2074 - 2079
Hlavní autori:	Ohishi, Yuji, Miyazaki, Yoshinobu, Muta, Hiroaki, Kurosaki, Ken, Yamanaka, Shinsuke, Uchida, Noriyuki, Tada, Tetsuya
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York Springer US 01.06.2015 Springer Nature B.V
Predmet:	Alloys Characterization and Evaluation of Materials Chemistry and Materials Science Electric properties Electronics and Microelectronics Heat conductivity Instrumentation Materials Science Nanocomposites Optical and Electronic Materials Solid State Physics nanocomposite metal silicide carrier transport property potential barrier thermoelectric property Type silicon
ISSN:	0361-5235, 1543-186X
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Abstract	In this study, we synthesized p -type nanocomposite films consisting of Si–nickel silicide and Si–molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into account the effect of ionized impurities, acoustic phonons, and grain boundaries. The potential barrier height was sufficiently low not to substantially affect carrier transport in the Si–nickel silicide composite film. Carrier transport in the Si–molybdenum silicide composite film was found to be affected by a scattering mechanism not included in this model. Thus, the transition metal significantly affects carrier transport and the thermoelectric properties of Si–metal silicide nanocomposite films.
AbstractList	Issue Title: 2014 International Conference on Thermoelectrics. Guest Editors: Lasse Rosendahl, Donald Morelli, Jihui Yang, Hiroaki Anno, Matt Beekman, Jan D. Koenig, Xinfeng Tang, James R. Salvador, Bertrand Lenoir, Chunlei Wan, Jeff Sharp, Emmanuel Guilmeau, Hsin Wang, Jing-feng Li, Tie-Jun Zhu, David Singh, Ryoji Funahashi, Yuri Grin, and Wenqing Zhang In this study, we synthesized p-type nanocomposite films consisting of Si-nickel silicide and Si-molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into account the effect of ionized impurities, acoustic phonons, and grain boundaries. The potential barrier height was sufficiently low not to substantially affect carrier transport in the Si-nickel silicide composite film. Carrier transport in the Si-molybdenum silicide composite film was found to be affected by a scattering mechanism not included in this model. Thus, the transition metal significantly affects carrier transport and the thermoelectric properties of Si-metal silicide nanocomposite films. In this study, we synthesized p -type nanocomposite films consisting of Si–nickel silicide and Si–molybdenum silicide nanocrystals and measured the temperature dependence of their electrical properties. To evaluate grain boundary potential barrier height, we developed a theoretical model taking into account the effect of ionized impurities, acoustic phonons, and grain boundaries. The potential barrier height was sufficiently low not to substantially affect carrier transport in the Si–nickel silicide composite film. Carrier transport in the Si–molybdenum silicide composite film was found to be affected by a scattering mechanism not included in this model. Thus, the transition metal significantly affects carrier transport and the thermoelectric properties of Si–metal silicide nanocomposite films.
Author	Uchida, Noriyuki Ohishi, Yuji Tada, Tetsuya Muta, Hiroaki Yamanaka, Shinsuke Kurosaki, Ken Miyazaki, Yoshinobu
Author_xml	– sequence: 1 givenname: Yuji surname: Ohishi fullname: Ohishi, Yuji email: ohishi@see.eng.osaka-u.ac.jp organization: Graduate School of Engineering, Osaka University – sequence: 2 givenname: Yoshinobu surname: Miyazaki fullname: Miyazaki, Yoshinobu organization: Graduate School of Engineering, Osaka University – sequence: 3 givenname: Hiroaki surname: Muta fullname: Muta, Hiroaki organization: Graduate School of Engineering, Osaka University – sequence: 4 givenname: Ken surname: Kurosaki fullname: Kurosaki, Ken organization: Graduate School of Engineering, Osaka University – sequence: 5 givenname: Shinsuke surname: Yamanaka fullname: Yamanaka, Shinsuke organization: Graduate School of Engineering, Osaka University, Research Institute of Nuclear Engineering, University of Fukui – sequence: 6 givenname: Noriyuki surname: Uchida fullname: Uchida, Noriyuki organization: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology – sequence: 7 givenname: Tetsuya surname: Tada fullname: Tada, Tetsuya organization: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Cites_doi	10.1103/PhysRev.130.1743 10.1063/1.3658021 10.1201/9781420049718 10.1557/opl.2013.533 10.1016/j.intermet.2011.02.003 10.1039/b822664b 10.1007/BF02651140 10.1016/0038-1098(85)90827-0 10.1109/T-ED.1983.21207 10.1002/adfm.200900250 10.1063/1.4823814 10.1063/1.4770452 10.1126/science.1158899 10.1063/1.1512964 10.1143/JJAP.6.573 10.1016/j.tsf.2013.02.127 10.1038/nmat2090 10.1016/0040-6090(72)90428-2 10.1017/CBO9780511618611
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Title	Carrier Transport Properties of p-Type Silicon–Metal Silicide Nanocrystal Composite Films
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