ZnO thickness and ZnTe back contact effect of CdTe thin film solar cell Voc and efficiency progression

CdTe thin film (TF) solar cells are most promising photovoltaic (PV) technology in commercial platform. Back contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. TF PV cells shallow recombination and parasitic loss lessening purpos...

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Vydané v:Materials Research Express Ročník 8; číslo 11; s. 116405 - 116411
Hlavní autori: Ghosh, Bablu K, Nasir, Syafiqa, Teo, Kenneth T K, Saad, Ismail
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Bristol IOP Publishing 01.11.2021
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Abstract CdTe thin film (TF) solar cells are most promising photovoltaic (PV) technology in commercial platform. Back contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. TF PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact with band matching window layers are essential. Beside that back and front contact thickness choice is vital for field associated selective carrier collection and generous optical transmission into the active junction of the cell. It can make variation of cell efficiency. Window and front contact layers band edge variation and back contact thickness effect is analyzed by SCAPS-1D simulation software. ZnO and SnO 2 front contact for CdS and CdSe window layers effect are numerically studied for 1 μ m CdTe thin film PV cell. Significance of materials for front contact and its thickness effect on current density while ZnTe back surface field contact thickness effect on open circuit voltage and efficiency are demonstrated. Finally, ZnO/CdS/CdTe/ZnTe cell of 0.925 V open circuit voltage and 19.06% efficiency has been achieved for 90 nm of ZnTe with Molybdenum (Mo) back contact.
AbstractList CdTe thin film (TF) solar cells are most promising photovoltaic (PV) technology in commercial platform. Back contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. TF PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact with band matching window layers are essential. Beside that back and front contact thickness choice is vital for field associated selective carrier collection and generous optical transmission into the active junction of the cell. It can make variation of cell efficiency. Window and front contact layers band edge variation and back contact thickness effect is analyzed by SCAPS-1D simulation software. ZnO and SnO _2 front contact for CdS and CdSe window layers effect are numerically studied for 1 μ m CdTe thin film PV cell. Significance of materials for front contact and its thickness effect on current density while ZnTe back surface field contact thickness effect on open circuit voltage and efficiency are demonstrated. Finally, ZnO/CdS/CdTe/ZnTe cell of 0.925 V open circuit voltage and 19.06% efficiency has been achieved for 90 nm of ZnTe with Molybdenum (Mo) back contact.
CdTe thin film (TF) solar cells are most promising photovoltaic (PV) technology in commercial platform. Back contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. TF PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact with band matching window layers are essential. Beside that back and front contact thickness choice is vital for field associated selective carrier collection and generous optical transmission into the active junction of the cell. It can make variation of cell efficiency. Window and front contact layers band edge variation and back contact thickness effect is analyzed by SCAPS-1D simulation software. ZnO and SnO 2 front contact for CdS and CdSe window layers effect are numerically studied for 1 μ m CdTe thin film PV cell. Significance of materials for front contact and its thickness effect on current density while ZnTe back surface field contact thickness effect on open circuit voltage and efficiency are demonstrated. Finally, ZnO/CdS/CdTe/ZnTe cell of 0.925 V open circuit voltage and 19.06% efficiency has been achieved for 90 nm of ZnTe with Molybdenum (Mo) back contact.
CdTe thin film (TF) solar cells are most promising photovoltaic (PV) technology in commercial platform. Back contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. TF PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact with band matching window layers are essential. Beside that back and front contact thickness choice is vital for field associated selective carrier collection and generous optical transmission into the active junction of the cell. It can make variation of cell efficiency. Window and front contact layers band edge variation and back contact thickness effect is analyzed by SCAPS-1D simulation software. ZnO and SnO2 front contact for CdS and CdSe window layers effect are numerically studied for 1 μm CdTe thin film PV cell. Significance of materials for front contact and its thickness effect on current density while ZnTe back surface field contact thickness effect on open circuit voltage and efficiency are demonstrated. Finally, ZnO/CdS/CdTe/ZnTe cell of 0.925 V open circuit voltage and 19.06% efficiency has been achieved for 90 nm of ZnTe with Molybdenum (Mo) back contact.
Author Ghosh, Bablu K
Teo, Kenneth T K
Saad, Ismail
Nasir, Syafiqa
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SubjectTerms Cadmium sulfide
Cadmium tellurides
CdTe
Efficiency
Electric contacts
Intermetallic compounds
Molybdenum
Open circuit voltage
Photovoltaic cells
SnO
SnO2
Solar cells
TCO
Thickness
Thin films
Tin dioxide
Zinc oxide
Zinc tellurides
ZnO
ZnTe
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Title ZnO thickness and ZnTe back contact effect of CdTe thin film solar cell Voc and efficiency progression
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