Time-Resolved Photoluminescence Microscopy for the Analysis of Semiconductor-Based Paint Layers

In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor pa...

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Vydané v:	Materials Ročník 10; číslo 11; s. 1335
Hlavní autori:	Comelli, Daniela, Artesani, Alessia, Nevin, Austin, Mosca, Sara, Gonzalez, Victor, Eveno, Myriam, Valentini, Gianluca
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Switzerland MDPI AG 21.11.2017 MDPI
Predmet:	Analytical chemistry Cadmium Chemical Sciences Degradation Fluorescence Microscopy Optics Paints Photoluminescence Physics Pigments Spectral sensitivity zinc white photoluminescence microscopy cadmium yellow semiconductor pigments time-resolved photoluminescence trap state levels
ISSN:	1996-1944, 1996-1944
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Abstract	In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint.
AbstractList	In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint. In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint.In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint.
Author	Artesani, Alessia Nevin, Austin Valentini, Gianluca Gonzalez, Victor Comelli, Daniela Mosca, Sara Eveno, Myriam
AuthorAffiliation	1 Physics Department, Politecnico di Milano, Piazza Leonardo da Vinci, 20133 Milano, Italy; alessia.artesani@polimi.it (A.A.); sara.mosca@polimi.it (S.M.); gianluca.valentini@polimi.it (G.V.) 3 Centre de Recherche et de Restauration des Musées de France (C2RMF), Palais du Louvre, F-75001 Paris, France; victor.gonzalez@culture.gouv.fr (V.G.); myriam.eveno@culture.gouv.fr (M.E.) 4 Chimie Paris-Tech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), F-75005 Paris, France 2 Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche (IFN-CNR), Piazza Leonardo da Vinci, 20133 Milano, Italy; austinnevin@gmail.com
AuthorAffiliation_xml	– name: 3 Centre de Recherche et de Restauration des Musées de France (C2RMF), Palais du Louvre, F-75001 Paris, France; victor.gonzalez@culture.gouv.fr (V.G.); myriam.eveno@culture.gouv.fr (M.E.) – name: 4 Chimie Paris-Tech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), F-75005 Paris, France – name: 1 Physics Department, Politecnico di Milano, Piazza Leonardo da Vinci, 20133 Milano, Italy; alessia.artesani@polimi.it (A.A.); sara.mosca@polimi.it (S.M.); gianluca.valentini@polimi.it (G.V.) – name: 2 Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche (IFN-CNR), Piazza Leonardo da Vinci, 20133 Milano, Italy; austinnevin@gmail.com
Author_xml	– sequence: 1 givenname: Daniela orcidid: 0000-0002-7175-2870 surname: Comelli fullname: Comelli, Daniela – sequence: 2 givenname: Alessia orcidid: 0000-0002-5534-0630 surname: Artesani fullname: Artesani, Alessia – sequence: 3 givenname: Austin orcidid: 0000-0003-1911-1045 surname: Nevin fullname: Nevin, Austin – sequence: 4 givenname: Sara surname: Mosca fullname: Mosca, Sara – sequence: 5 givenname: Victor surname: Gonzalez fullname: Gonzalez, Victor – sequence: 6 givenname: Myriam surname: Eveno fullname: Eveno, Myriam – sequence: 7 givenname: Gianluca orcidid: 0000-0002-6340-3021 surname: Valentini fullname: Valentini, Gianluca
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SubjectTerms	Analytical chemistry Cadmium Chemical Sciences Degradation Fluorescence Microscopy Optics Paints Photoluminescence Physics Pigments Spectral sensitivity
Title	Time-Resolved Photoluminescence Microscopy for the Analysis of Semiconductor-Based Paint Layers
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