A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

Herein, physical reservoir computing with a redox‐based ion‐gating reservoir (redox‐IGR) comprising Li x WO 3 thin film and lithium‐ion conducting glass ceramic (LICGC) is demonstrated. The subject redox‐IGR successfully solves a second‐order nonlinear dynamic equation by utilizing voltage pulse dri...

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Bibliographic Details
Published in:	Advanced intelligent systems Vol. 5; no. 9
Main Authors:	Wada, Tomoki, Nishioka, Daiki, Namiki, Wataru, Tsuchiya, Takashi, Higuchi, Tohru, Terabe, Kazuya
Format:	Journal Article
Language:	English
Published:	Weinheim John Wiley & Sons, Inc 01.09.2023 Wiley
Subjects:	all-solid-state Autoregressive moving average Computation Electrodes Electrolytes Errors Glass ceramics Integrated circuits ion-gating reservoir ion-gating transistor lithium ion Lithium ions Memory tasks nanoionics neuromorphic Nonlinear dynamics Nonlinear response Pattern recognition Thin films Transistors
ISSN:	2640-4567, 2640-4567
Online Access:	Get full text
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