Wada, T., Nishioka, D., Namiki, W., Tsuchiya, T., Higuchi, T., & Terabe, K. (2023). A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses. Advanced intelligent systems, 5(9), -n/a. https://doi.org/10.1002/aisy.202300123
Chicago Style (17th ed.) CitationWada, Tomoki, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Tohru Higuchi, and Kazuya Terabe. "A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses." Advanced Intelligent Systems 5, no. 9 (2023): -n/a. https://doi.org/10.1002/aisy.202300123.
MLA (9th ed.) CitationWada, Tomoki, et al. "A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses." Advanced Intelligent Systems, vol. 5, no. 9, 2023, pp. -n/a, https://doi.org/10.1002/aisy.202300123.