Bottom‐Up Quasi‐Epitaxial Growth of Hybrid Perovskite from Solution Process—Achieving High‐Efficiency Solar Cells via Template‐Guided Crystallization
Epitaxial growth gives the highest‐quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐formamidinium lead triiodide (α‐FAPbI3) perovskite film via a two‐step method is reported, in which t...
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| Abstract | Epitaxial growth gives the highest‐quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐formamidinium lead triiodide (α‐FAPbI3) perovskite film via a two‐step method is reported, in which the crystal orientation of α‐FAPbI3 film is precisely controlled through the synergetic effect of methylammonium chloride and the large‐organic cation butylammonium bromide. In situ GIWAXS visualizes the BA‐related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom‐up quasi‐epitaxial growth in the subsequent annealing process. The template‐guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4‐time operation condition lifetime enhancement.
A universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐FAPbI3 perovskite film is achieved through the synergetic effect of methylammonium chloride and a large‐organic cation. In situ GIWAXS visualizes the BA‐related intermediate phase formation at the bottom, which serves as a guiding template for the bottom‐up quasi‐epitaxial growth in the subsequent annealing process. |
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| AbstractList | Epitaxial growth gives the highest-quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution-processed bottom-up quasi-epitaxial growth of highly oriented α-formamidinium lead triiodide (α-FAPbI
) perovskite film via a two-step method is reported, in which the crystal orientation of α-FAPbI
film is precisely controlled through the synergetic effect of methylammonium chloride and the large-organic cation butylammonium bromide. In situ GIWAXS visualizes the BA-related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom-up quasi-epitaxial growth in the subsequent annealing process. The template-guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4-time operation condition lifetime enhancement. Epitaxial growth gives the highest‐quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐formamidinium lead triiodide (α‐FAPbI3) perovskite film via a two‐step method is reported, in which the crystal orientation of α‐FAPbI3 film is precisely controlled through the synergetic effect of methylammonium chloride and the large‐organic cation butylammonium bromide. In situ GIWAXS visualizes the BA‐related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom‐up quasi‐epitaxial growth in the subsequent annealing process. The template‐guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4‐time operation condition lifetime enhancement. A universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐FAPbI3 perovskite film is achieved through the synergetic effect of methylammonium chloride and a large‐organic cation. In situ GIWAXS visualizes the BA‐related intermediate phase formation at the bottom, which serves as a guiding template for the bottom‐up quasi‐epitaxial growth in the subsequent annealing process. Epitaxial growth gives the highest‐quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐formamidinium lead triiodide (α‐FAPbI 3 ) perovskite film via a two‐step method is reported, in which the crystal orientation of α‐FAPbI 3 film is precisely controlled through the synergetic effect of methylammonium chloride and the large‐organic cation butylammonium bromide. In situ GIWAXS visualizes the BA‐related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom‐up quasi‐epitaxial growth in the subsequent annealing process. The template‐guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4‐time operation condition lifetime enhancement. Epitaxial growth gives the highest-quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution-processed bottom-up quasi-epitaxial growth of highly oriented α-formamidinium lead triiodide (α-FAPbI3 ) perovskite film via a two-step method is reported, in which the crystal orientation of α-FAPbI3 film is precisely controlled through the synergetic effect of methylammonium chloride and the large-organic cation butylammonium bromide. In situ GIWAXS visualizes the BA-related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom-up quasi-epitaxial growth in the subsequent annealing process. The template-guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4-time operation condition lifetime enhancement.Epitaxial growth gives the highest-quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution-processed bottom-up quasi-epitaxial growth of highly oriented α-formamidinium lead triiodide (α-FAPbI3 ) perovskite film via a two-step method is reported, in which the crystal orientation of α-FAPbI3 film is precisely controlled through the synergetic effect of methylammonium chloride and the large-organic cation butylammonium bromide. In situ GIWAXS visualizes the BA-related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom-up quasi-epitaxial growth in the subsequent annealing process. The template-guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4-time operation condition lifetime enhancement. Epitaxial growth gives the highest‐quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution‐processed bottom‐up quasi‐epitaxial growth of highly oriented α‐formamidinium lead triiodide (α‐FAPbI3) perovskite film via a two‐step method is reported, in which the crystal orientation of α‐FAPbI3 film is precisely controlled through the synergetic effect of methylammonium chloride and the large‐organic cation butylammonium bromide. In situ GIWAXS visualizes the BA‐related intermediate phase formation at the bottom of film, which serves as a guiding template for the bottom‐up quasi‐epitaxial growth in the subsequent annealing process. The template‐guided epitaxially grown BAFAMA perovskite film exhibits increased crystallinity, preferred crystallographic orientation, and reduced defects. Moreover, the BAFAMA perovskite solar cells demonstrate decent stability, maintaining 95% of their initial power conversion efficiency after 2600 h ambient storage, and 4‐time operation condition lifetime enhancement. |
| Author | Liu, Kuan Li, Gang Yu, Wei Huang, Jiaming Zhang, Hengkai Lu, Xinhui Zhang, Yaokang Zheng, Zijian Liang, Qiong Chandran, Hrisheekesh Thachoth Ren, Zhiwei Chen, Zhiliang Qin, Minchao Fong, Patrick W. K. |
| Author_xml | – sequence: 1 givenname: Hengkai surname: Zhang fullname: Zhang, Hengkai organization: The Hong Kong Polytechnic University – sequence: 2 givenname: Minchao surname: Qin fullname: Qin, Minchao organization: The Chinese University of Hong Kong – sequence: 3 givenname: Zhiliang surname: Chen fullname: Chen, Zhiliang organization: The Hong Kong Polytechnic University – sequence: 4 givenname: Wei surname: Yu fullname: Yu, Wei organization: Dalian National Laboratory for Clean Energy – sequence: 5 givenname: Zhiwei surname: Ren fullname: Ren, Zhiwei organization: The Hong Kong Polytechnic University – sequence: 6 givenname: Kuan surname: Liu fullname: Liu, Kuan organization: The Hong Kong Polytechnic University – sequence: 7 givenname: Jiaming surname: Huang fullname: Huang, Jiaming organization: The Hong Kong Polytechnic University – sequence: 8 givenname: Yaokang surname: Zhang fullname: Zhang, Yaokang organization: The Hong Kong Polytechnic University – sequence: 9 givenname: Qiong surname: Liang fullname: Liang, Qiong organization: The Hong Kong Polytechnic University – sequence: 10 givenname: Hrisheekesh Thachoth surname: Chandran fullname: Chandran, Hrisheekesh Thachoth organization: The Hong Kong Polytechnic University – sequence: 11 givenname: Patrick W. K. surname: Fong fullname: Fong, Patrick W. K. organization: The Hong Kong Polytechnic University – sequence: 12 givenname: Zijian surname: Zheng fullname: Zheng, Zijian organization: The Hong Kong Polytechnic University – sequence: 13 givenname: Xinhui surname: Lu fullname: Lu, Xinhui email: xhlu@phy.cuhk.edu.hk organization: The Chinese University of Hong Kong – sequence: 14 givenname: Gang orcidid: 0000-0001-8399-7771 surname: Li fullname: Li, Gang email: gang.w.li@polyu.edu.hk organization: The Hong Kong Polytechnic University |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/33893688$$D View this record in MEDLINE/PubMed |
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| Keywords | self-assembly bottom-up growth perovskite solar cells quasi-epitaxial growth |
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| Snippet | Epitaxial growth gives the highest‐quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution‐processed bottom‐up... Epitaxial growth gives the highest-quality crystalline semiconductor thin films for optoelectronic devices. Here, a universal solution-processed bottom-up... |
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| SubjectTerms | bottom‐up growth Crystal defects Crystal structure Crystallinity Crystallization Crystallography Energy conversion efficiency Epitaxial growth Materials science Optoelectronic devices perovskite solar cells Perovskites Photovoltaic cells quasi‐epitaxial growth self‐assembly Solar cells Thin films |
| Title | Bottom‐Up Quasi‐Epitaxial Growth of Hybrid Perovskite from Solution Process—Achieving High‐Efficiency Solar Cells via Template‐Guided Crystallization |
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