Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector

The use of diamond as a semiconductor material in power electronics applications is held back by the presence of vertical threading dislocations that are believed to deteriorate device performance. Reducing their occurrence in single crystal diamond is therefore crucial. Recently we found that thick...

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Vydané v:	Diamond and related materials Ročník 83; s. 162 - 169
Hlavní autori:	Boussadi, A., Tallaire, A., Kasu, M., Barjon, J., Achard, J.
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Amsterdam Elsevier B.V 01.03.2018 Elsevier BV Elsevier
Predmet:	Chemical and Process Engineering Chemical vapor deposition Confinement Crystals Diamonds Dislocation density Engineering Sciences Extended defect Growth sector boundary Physics Plasma assisted CVD Plasma physics Pyramidal shape substrate Reduction Semiconductor materials Single crystal diamond Single crystals Substrates Threading dislocation Threading dislocations Confinement Threading dislocation Plasma assisted CVD Growth sector boundary Single crystal diamond Extended defect Pyramidal shape substrate
ISSN:	0925-9635, 1879-0062
On-line prístup:	Získať plný text
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