Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector

The use of diamond as a semiconductor material in power electronics applications is held back by the presence of vertical threading dislocations that are believed to deteriorate device performance. Reducing their occurrence in single crystal diamond is therefore crucial. Recently we found that thick...

Full description

Saved in:

Bibliographic Details
Published in:	Diamond and related materials Vol. 83; pp. 162 - 169
Main Authors:	Boussadi, A., Tallaire, A., Kasu, M., Barjon, J., Achard, J.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01.03.2018 Elsevier BV Elsevier
Subjects:	Chemical and Process Engineering Chemical vapor deposition Confinement Crystals Diamonds Dislocation density Engineering Sciences Extended defect Growth sector boundary Physics Plasma assisted CVD Plasma physics Pyramidal shape substrate Reduction Semiconductor materials Single crystal diamond Single crystals Substrates Threading dislocation Threading dislocations Confinement Threading dislocation Plasma assisted CVD Growth sector boundary Single crystal diamond Extended defect Pyramidal shape substrate
ISSN:	0925-9635, 1879-0062
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Be the first to leave a comment!