Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a...

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Veröffentlicht in:Physical review letters Jg. 117; H. 26; S. 267201
Hauptverfasser: He, Junfeng, Zhang, Chaofan, Ghimire, Nirmal J., Liang, Tian, Jia, Chunjing, Jiang, Juan, Tang, Shujie, Chen, Sudi, He, Yu, Mo, S.-K., Hwang, C. C., Hashimoto, M., Lu, D. H., Moritz, B., Devereaux, T. P., Chen, Y. L., Mitchell, J. F., Shen, Z.-X.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: United States 23.12.2016
Schlagworte:
Compensation
Electronic structure
Hole mobility
Magnetoresistance
Magnetoresistivity
Metalloids
Spectroscopy
Topology
ISSN:0031-9007, 1079-7114
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Zusammenfassung:An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
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ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.117.267201