He, J., Zhang, C., Ghimire, N. J., Liang, T., Jia, C., Jiang, J., . . . Shen, Z. (2016). Distinct Electronic Structure for the Extreme Magnetoresistance in YSb. Physical review letters, 117(26), 267201. https://doi.org/10.1103/PhysRevLett.117.267201
Chicago-Zitierstil (17. Ausg.)He, Junfeng, et al. "Distinct Electronic Structure for the Extreme Magnetoresistance in YSb." Physical Review Letters 117, no. 26 (2016): 267201. https://doi.org/10.1103/PhysRevLett.117.267201.
MLA-Zitierstil (9. Ausg.)He, Junfeng, et al. "Distinct Electronic Structure for the Extreme Magnetoresistance in YSb." Physical Review Letters, vol. 117, no. 26, 2016, p. 267201, https://doi.org/10.1103/PhysRevLett.117.267201.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.