Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects

Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2pz-like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs s...

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Published in:Physica. B, Condensed matter Vol. 453; pp. 140 - 145
Main Authors: Restrepo, R.L., Morales, A.L., Martínez-Orozco, J.C., Baghramyan, H.M., Barseghyan, M.G., Mora-Ramos, M.E., Duque, C.A.
Format: Journal Article Conference Proceeding
Language:English
Published: Kidlington Elsevier B.V 15.11.2014
Elsevier
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ISSN:0921-4526, 1873-2135
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Abstract Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2pz-like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs single quantum ring with axial n-type delta-doping. The delta-like potential along the z-direction is an approximate model analytically described using a Lorentzian function with two parameters. Additionally we consider the application of an electric field along the z-direction. It is found that the changes in the geometry of the quantum ring, the change in the 2D impurity density of the delta-like doping, and different values of the electric field lead to a shifting of the resonant peaks of the optical responses spectrum.
AbstractList Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2p sub(z)like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs single quantum ring with axial n-type delta-doping. The delta-like potential along the z-direction is an approximate model analytically described using a Lorentzian function with two parameters. Additionally we consider the application of an electric field along the z-direction. It is found that the changes in the geometry of the quantum ring, the change in the 2D impurity density of the delta-like doping, and different values of the electric field lead to a shifting of the resonant peaks of the optical responses spectrum.
Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2pz-like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs single quantum ring with axial n-type delta-doping. The delta-like potential along the z-direction is an approximate model analytically described using a Lorentzian function with two parameters. Additionally we consider the application of an electric field along the z-direction. It is found that the changes in the geometry of the quantum ring, the change in the 2D impurity density of the delta-like doping, and different values of the electric field lead to a shifting of the resonant peaks of the optical responses spectrum.
Author Martínez-Orozco, J.C.
Duque, C.A.
Restrepo, R.L.
Baghramyan, H.M.
Mora-Ramos, M.E.
Barseghyan, M.G.
Morales, A.L.
Author_xml – sequence: 1
  givenname: R.L.
  surname: Restrepo
  fullname: Restrepo, R.L.
  email: rrestre@gmail.com
  organization: Escuela de Ingeniería de Antioquia-EIA, Medellín, Colombia
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  givenname: A.L.
  surname: Morales
  fullname: Morales, A.L.
  organization: Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
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  givenname: J.C.
  surname: Martínez-Orozco
  fullname: Martínez-Orozco, J.C.
  organization: Unidad Académica de Física, Universidad Autónoma de Zacatecas, CP 98060, Zacatecas, Mexico
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  givenname: H.M.
  surname: Baghramyan
  fullname: Baghramyan, H.M.
  organization: Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan, Armenia
– sequence: 5
  givenname: M.G.
  surname: Barseghyan
  fullname: Barseghyan, M.G.
  organization: Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan, Armenia
– sequence: 6
  givenname: M.E.
  surname: Mora-Ramos
  fullname: Mora-Ramos, M.E.
  organization: Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
– sequence: 7
  givenname: C.A.
  surname: Duque
  fullname: Duque, C.A.
  organization: Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
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Keywords GaAs quantum rings
Electric field
Impurity related nonlinear optical properties
Delta-like confinement potential
Gallium arsenides
Impurity density
Variational methods
Quantum ring
Refractive index
Planar doping
Two dimensional model
Excited states
Effective mass model
Electric field effects
Binding energy
Donor center
Absorption spectra
Nonlinear optics
Language English
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Snippet Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the...
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SubjectTerms Approximation
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Delta-like confinement potential
Density
Electric field
Electric fields
Exact sciences and technology
GaAs quantum rings
Impurities
Impurity related nonlinear optical properties
Mathematical analysis
Mathematical models
Nonlinearity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wells
Title Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects
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