Optimized rapid thermal process for high efficiency silicon solar cells

Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction i...

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Published in:Solar energy materials and solar cells Vol. 65; no. 1; pp. 495 - 501
Main Authors: Noël, S, Slaoui, A, Peters, S, Lautenschlager, H, Schindler, R, Muller, J.C
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 2001
Elsevier
Subjects:
Applied sciences
Efficiency
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Rapid thermal processing
Silicon solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Silicon solar cells
Efficiency
Rapid thermal processing
Impurity density
Doping
Aluminium addition
Phosphorus addition
Optimization
Surface
Solar cell
Rapid thermal annealing
Quantum efficiency
Surface recombination
Charge carrier recombination
Silicon
Concentration distribution
ISSN:0927-0248, 1879-3398
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Abstract Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction is one of the major parameters, in order to obtain suitable front surface recombination velocities. Simultaneous diffusion of phosphorus and aluminum is used to realize emitter and back surface field in a single high-temperature step, with optimized gettering effect. Controlling the mentioned parameters on industrial 1 Ω cm Cz material lead in 17.5% efficient solar cells on a surface of 25 cm 2. All results are discussed in terms of process temperature, dopant source concentration and effective process time, below 1 min including high heating and cooling rates.
AbstractList Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction is one of the major parameters, in order to obtain suitable front surface recombination velocities. Simultaneous diffusion of phosphorus and aluminum is used to realize emitter and back surface field in a single high-temperature step, with optimized gettering effect. Controlling the mentioned parameters on industrial 1 Omega cm Cz material lead in 17.5% efficient solar cells on a surface of 25 cm super(2). All results are discussed in terms of process temperature, dopant source concentration and effective process time, below 1 min including high heating and cooling rates.
Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction is one of the major parameters, in order to obtain suitable front surface recombination velocities. Simultaneous diffusion of phosphorus and aluminum is used to realize emitter and back surface field in a single high-temperature step, with optimized gettering effect. Controlling the mentioned parameters on industrial 1 Ω cm Cz material lead in 17.5% efficient solar cells on a surface of 25 cm 2. All results are discussed in terms of process temperature, dopant source concentration and effective process time, below 1 min including high heating and cooling rates.
Author Peters, S
Lautenschlager, H
Slaoui, A
Noël, S
Schindler, R
Muller, J.C
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Cites_doi 10.1109/T-ED.1984.21805
10.1109/T-ED.1979.19525
10.1109/T-ED.1986.22473
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Issue 1
Keywords Silicon solar cells
Efficiency
Rapid thermal processing
Impurity density
Doping
Aluminium addition
Phosphorus addition
Optimization
Surface
Solar cell
Rapid thermal annealing
Quantum efficiency
Surface recombination
Charge carrier recombination
Silicon
Concentration distribution
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References Del Alamo, Swanson (BIB4) 1984; ED-31
P. Doshi, J. Moschner, J. Jeong, A. Rohatgi, R. Singh, S. Narayanan, Proceedings of the 26th IEEE PVSEC, 1997, p. 87.
Shibib, Lindholm, Therez (BIB3) 1979; ED-26
A. Cuevas, P.A. Basore, G. Giroult-Matlakowski, C. Dubois, Proceedings of the 13th ECPVSEC, Nice, 1995.
Park, Neugroschel, Lindholm (BIB2) 1986; ED-33
Del Alamo (10.1016/S0927-0248(00)00132-X_BIB4) 1984; ED-31
10.1016/S0927-0248(00)00132-X_BIB5
Shibib (10.1016/S0927-0248(00)00132-X_BIB3) 1979; ED-26
10.1016/S0927-0248(00)00132-X_BIB1
Park (10.1016/S0927-0248(00)00132-X_BIB2) 1986; ED-33
References_xml – reference: P. Doshi, J. Moschner, J. Jeong, A. Rohatgi, R. Singh, S. Narayanan, Proceedings of the 26th IEEE PVSEC, 1997, p. 87.
– volume: ED-33
  start-page: 240
  year: 1986
  ident: BIB2
  publication-title: IEEE Trans. Electron. Dev.
– volume: ED-26
  start-page: 959
  year: 1979
  ident: BIB3
  publication-title: IEEE Trans. Electron. Dev.
– volume: ED-31
  start-page: 1878
  year: 1984
  end-page: 1888
  ident: BIB4
  publication-title: IEEE Trans. Electron. Dev.
– reference: A. Cuevas, P.A. Basore, G. Giroult-Matlakowski, C. Dubois, Proceedings of the 13th ECPVSEC, Nice, 1995.
– volume: ED-31
  start-page: 1878
  issue: 12
  year: 1984
  ident: 10.1016/S0927-0248(00)00132-X_BIB4
  publication-title: IEEE Trans. Electron. Dev.
  doi: 10.1109/T-ED.1984.21805
– ident: 10.1016/S0927-0248(00)00132-X_BIB5
– ident: 10.1016/S0927-0248(00)00132-X_BIB1
– volume: ED-26
  start-page: 959
  year: 1979
  ident: 10.1016/S0927-0248(00)00132-X_BIB3
  publication-title: IEEE Trans. Electron. Dev.
  doi: 10.1109/T-ED.1979.19525
– volume: ED-33
  start-page: 240
  year: 1986
  ident: 10.1016/S0927-0248(00)00132-X_BIB2
  publication-title: IEEE Trans. Electron. Dev.
  doi: 10.1109/T-ED.1986.22473
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SubjectTerms Applied sciences
Efficiency
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Rapid thermal processing
Silicon solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Title Optimized rapid thermal process for high efficiency silicon solar cells
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