Optimized rapid thermal process for high efficiency silicon solar cells

Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction i...

Celý popis

Uložené v:
Podrobná bibliografia
Vydané v:Solar energy materials and solar cells Ročník 65; číslo 1; s. 495 - 501
Hlavní autori: Noël, S, Slaoui, A, Peters, S, Lautenschlager, H, Schindler, R, Muller, J.C
Médium: Journal Article Konferenčný príspevok..
Jazyk:English
Vydavateľské údaje: Amsterdam Elsevier B.V 2001
Elsevier
Predmet:
Applied sciences
Efficiency
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Rapid thermal processing
Silicon solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Silicon solar cells
Efficiency
Rapid thermal processing
Impurity density
Doping
Aluminium addition
Phosphorus addition
Optimization
Surface
Solar cell
Rapid thermal annealing
Quantum efficiency
Surface recombination
Charge carrier recombination
Silicon
Concentration distribution
ISSN:0927-0248, 1879-3398
On-line prístup:Získať plný text
Tagy: Pridať tag
Žiadne tagy, Buďte prvý, kto otaguje tento záznam!
Popis
Shrnutí:Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction is one of the major parameters, in order to obtain suitable front surface recombination velocities. Simultaneous diffusion of phosphorus and aluminum is used to realize emitter and back surface field in a single high-temperature step, with optimized gettering effect. Controlling the mentioned parameters on industrial 1 Ω cm Cz material lead in 17.5% efficient solar cells on a surface of 25 cm 2. All results are discussed in terms of process temperature, dopant source concentration and effective process time, below 1 min including high heating and cooling rates.
Bibliografia:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(00)00132-X