Epitaxial growth of (Ba0.7Sr0.3)TiO3 thin films on GdScO3 substrates by magnetron sputtering
Epitaxial growth of Ba0.7Sr0.3TiO3 (BST70) thin films on GdScO3 (GSO) substrates had been realized using the radio frequency magnetron sputtering system with the epitaxial alignment [001]BST70||[110]GSO and [010]BST70||[001]GSO. Reciprocal space mapping and transmission electron microscope results c...
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| Published in: | AIP advances Vol. 13; no. 5; pp. 055113 - 055113-5 |
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American Institute of Physics
01.05.2023
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| Abstract | Epitaxial growth of Ba0.7Sr0.3TiO3 (BST70) thin films on GdScO3 (GSO) substrates had been realized using the radio frequency magnetron sputtering system with the epitaxial alignment [001]BST70||[110]GSO and [010]BST70||[001]GSO. Reciprocal space mapping and transmission electron microscope results confirm the epitaxial growth without an impurity phase at the interface. The Fourier-filtered image shows that the BST70 thin film grew well with few dislocations. The out-of-plane parameter of the as-deposited film was elongated due to strain, which was induced by the differences in the thermal expansion coefficients between the film and the substrate, and oxygen vacancies. The highly strained as-deposited BST70 films could be relaxed by the post-annealing procedure at 800 °C in an O2-rich atmosphere for better epitaxial quality. |
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| AbstractList | Epitaxial growth of Ba0.7Sr0.3TiO3 (BST70) thin films on GdScO3 (GSO) substrates had been realized using the radio frequency magnetron sputtering system with the epitaxial alignment [001]BST70||[110]GSO and [010]BST70||[001]GSO. Reciprocal space mapping and transmission electron microscope results confirm the epitaxial growth without an impurity phase at the interface. The Fourier-filtered image shows that the BST70 thin film grew well with few dislocations. The out-of-plane parameter of the as-deposited film was elongated due to strain, which was induced by the differences in the thermal expansion coefficients between the film and the substrate, and oxygen vacancies. The highly strained as-deposited BST70 films could be relaxed by the post-annealing procedure at 800 °C in an O2-rich atmosphere for better epitaxial quality. |
| Author | Nie, Penghao Jiang, Shuwen Zhang, Wanli Ye, Dongjin |
| Author_xml | – sequence: 1 givenname: Dongjin surname: Ye fullname: Ye, Dongjin organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China – sequence: 2 givenname: Penghao surname: Nie fullname: Nie, Penghao organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China – sequence: 3 givenname: Shuwen surname: Jiang fullname: Jiang, Shuwen organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China – sequence: 4 givenname: Wanli surname: Zhang fullname: Zhang, Wanli organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China |
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| Snippet | Epitaxial growth of Ba0.7Sr0.3TiO3 (BST70) thin films on GdScO3 (GSO) substrates had been realized using the radio frequency magnetron sputtering system with... |
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| SubjectTerms | Epitaxial growth Image filters Magnetron sputtering Substrates Thermal expansion Thin films |
| Title | Epitaxial growth of (Ba0.7Sr0.3)TiO3 thin films on GdScO3 substrates by magnetron sputtering |
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