A simple efficient method of nanofilm-on-bulk-substrate thermal conductivity measurement using Raman thermometry

•First Raman thermometric measurement of thermal conductivity of films on bulk substrate.•A simple efficient method: a dozen of films on quartz can be examined in one hour.•The method works for any film with thickness h > Λ (phonon-mean-free path).•For h < Λ, this method works when the in-plan...

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Vydáno v:	International journal of heat and mass transfer Ročník 123; s. 137 - 142
Hlavní autoři:	Poborchii, Vladimir, Uchida, Noriyuki, Miyazaki, Yoshinobu, Tada, Tetsuya, Geshev, Pavel I., Utegulov, Zhandos N., Volkov, Alexey
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Oxford Elsevier Ltd 01.08.2018 Elsevier BV
Témata:	Boundary layer Crystal structure Crystallinity Dependence Heat conductivity Heat transfer Laser beam heating Mathematical analysis Nanocrystals Nanoelectronics Polycrystals Quartz Silicon films Substrates Thermal conductivity Thermal resistance Thermometry Thickness Transport
ISSN:	0017-9310, 1879-2189
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Abstract	•First Raman thermometric measurement of thermal conductivity of films on bulk substrate.•A simple efficient method: a dozen of films on quartz can be examined in one hour.•The method works for any film with thickness h > Λ (phonon-mean-free path).•For h < Λ, this method works when the in-plane diffusive phonon transport dominates. In contrast to known Raman-thermometric measurements of thermal conductivity (k) of suspended Si nano-membranes, here we apply Raman thermometry for k measurement of mono- and nano-crystalline Si films on quartz, which is important for applications in thermoelectricity and nanoelectronics. Experimentally, we measure linear dependence of the laser-induced Raman band downshift, which is proportional to the moderate heating ΔT, on the laser power P. Then we convert the downshift to ΔT and determine the ratio ΔT/P. The actual power absorbed by the film is calculated theoretically and controlled experimentally by the reflection/transmission measurement. Then we calculate ΔTcalc/P for arbitrary film k assuming diffusive phonon transport (DPT). Film k is determined from the condition ΔT/P = ΔTcalc/P. We show that this method works well for films with thickness h > Λ, where Λ is phonon-mean-free path, even for low-k films like nano-crystalline Si and SiGe. For h < Λ, despite ballistic phonon transport contribution, this approach works when the in-plane DPT dominates, e.g. in Si films on quartz with h ≥ 60 nm. We also show that the influence of thermal boundary resistance on the determined k is negligible at this condition. The proposed method is simple and time efficient, as dozen of films can be examined in one hour.
AbstractList	In contrast to known Raman-thermometric measurements of thermal conductivity (k) of suspended Si nano-membranes, here we apply Raman thermometry for k measurement of mono- and nano-crystalline Si films on quartz, which is important for applications in thermoelectricity and nanoelectronics. Experimentally, we measure linear dependence of the laser-induced Raman band downshift, which is proportional to the moderate heating ΔT, on the laser power P. Then we convert the downshift to ΔT and determine the ratio ΔT/P. The actual power absorbed by the film is calculated theoretically and controlled experimentally by the reflection/transmission measurement. Then we calculate ΔTcalc/P for arbitrary film k assuming diffusive phonon transport (DPT). Film k is determined from the condition ΔT/P = ΔTcalc/P. We show that this method works well for films with thickness h > Λ, where Λ is phonon-mean-free path, even for low-k films like nano-crystalline Si and SiGe. For h < Λ, despite ballistic phonon transport contribution, this approach works when the in-plane DPT dominates, e.g. in Si films on quartz with h ≥ 60 nm. We also show that the influence of thermal boundary resistance on the determined k is negligible at this condition. The proposed method is simple and time efficient, as dozen of films can be examined in one hour. •First Raman thermometric measurement of thermal conductivity of films on bulk substrate.•A simple efficient method: a dozen of films on quartz can be examined in one hour.•The method works for any film with thickness h > Λ (phonon-mean-free path).•For h < Λ, this method works when the in-plane diffusive phonon transport dominates. In contrast to known Raman-thermometric measurements of thermal conductivity (k) of suspended Si nano-membranes, here we apply Raman thermometry for k measurement of mono- and nano-crystalline Si films on quartz, which is important for applications in thermoelectricity and nanoelectronics. Experimentally, we measure linear dependence of the laser-induced Raman band downshift, which is proportional to the moderate heating ΔT, on the laser power P. Then we convert the downshift to ΔT and determine the ratio ΔT/P. The actual power absorbed by the film is calculated theoretically and controlled experimentally by the reflection/transmission measurement. Then we calculate ΔTcalc/P for arbitrary film k assuming diffusive phonon transport (DPT). Film k is determined from the condition ΔT/P = ΔTcalc/P. We show that this method works well for films with thickness h > Λ, where Λ is phonon-mean-free path, even for low-k films like nano-crystalline Si and SiGe. For h < Λ, despite ballistic phonon transport contribution, this approach works when the in-plane DPT dominates, e.g. in Si films on quartz with h ≥ 60 nm. We also show that the influence of thermal boundary resistance on the determined k is negligible at this condition. The proposed method is simple and time efficient, as dozen of films can be examined in one hour.
Author	Uchida, Noriyuki Volkov, Alexey Tada, Tetsuya Utegulov, Zhandos N. Poborchii, Vladimir Geshev, Pavel I. Miyazaki, Yoshinobu
Author_xml	– sequence: 1 givenname: Vladimir surname: Poborchii fullname: Poborchii, Vladimir email: Vladimir.p@aist.go.jp organization: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, AIST Central-5, Tsukuba 305-8565, Japan – sequence: 2 givenname: Noriyuki surname: Uchida fullname: Uchida, Noriyuki organization: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, AIST Central-5, Tsukuba 305-8565, Japan – sequence: 3 givenname: Yoshinobu surname: Miyazaki fullname: Miyazaki, Yoshinobu organization: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, AIST Central-5, Tsukuba 305-8565, Japan – sequence: 4 givenname: Tetsuya surname: Tada fullname: Tada, Tetsuya organization: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, AIST Central-5, Tsukuba 305-8565, Japan – sequence: 5 givenname: Pavel I. surname: Geshev fullname: Geshev, Pavel I. organization: Institute of Thermophysics of the Russian Academy of Sciences, Lavrentyev Ave. 1, Russia – sequence: 6 givenname: Zhandos N. surname: Utegulov fullname: Utegulov, Zhandos N. organization: Department of Physics, School of Science and Technology, Nazarbayev University, 53 Kabanbai Batyr Ave., Astana 010000, Kazakhstan – sequence: 7 givenname: Alexey surname: Volkov fullname: Volkov, Alexey organization: Interdisciplinary Instrumentation Center, National Laboratory Astana, Nazarbayev University, 53 Kabanbai Batyr Ave., Astana 010000, Kazakhstan
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Snippet	•First Raman thermometric measurement of thermal conductivity of films on bulk substrate.•A simple efficient method: a dozen of films on quartz can be examined... In contrast to known Raman-thermometric measurements of thermal conductivity (k) of suspended Si nano-membranes, here we apply Raman thermometry for k...
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SubjectTerms	Boundary layer Crystal structure Crystallinity Dependence Heat conductivity Heat transfer Laser beam heating Mathematical analysis Nanocrystals Nanoelectronics Polycrystals Quartz Silicon films Substrates Thermal conductivity Thermal resistance Thermometry Thickness Transport
Title	A simple efficient method of nanofilm-on-bulk-substrate thermal conductivity measurement using Raman thermometry
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