Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p...

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Vydáno v:Thin solid films Ročník 511; číslo Complete; s. 385 - 389
Hlavní autoři: Gudovskikh, A.S., Kleider, J.-P., Damon-Lacoste, J., Roca i Cabarrocas, P., Veschetti, Y., Muller, J.-C., Ribeyron, P.-J., Rolland, E.
Médium: Journal Article
Jazyk:angličtina
Vydáno: Elsevier B.V 26.07.2006
Elsevier
Témata:
Capacitance technique
Heterojunction
Solar cells
Solar cells
Capacitance technique
Heterojunction
ISSN:0040-6090, 1879-2731
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Shrnutí:The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed.
Bibliografie:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.12.111