Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy
The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p...
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| Vydáno v: | Thin solid films Ročník 511; číslo Complete; s. 385 - 389 |
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| Jazyk: | angličtina |
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Elsevier B.V
26.07.2006
Elsevier |
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| ISSN: | 0040-6090, 1879-2731 |
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| Abstract | The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed. |
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| AbstractList | The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed. |
| Author | Gudovskikh, A.S. Veschetti, Y. Roca i Cabarrocas, P. Kleider, J.-P. Muller, J.-C. Rolland, E. Damon-Lacoste, J. Ribeyron, P.-J. |
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| Cites_doi | 10.1103/PhysRevB.25.5285 10.1016/S0022-3093(99)00900-X 10.1063/1.1623610 10.1116/1.577318 10.1063/1.321865 10.1016/j.tsf.2003.10.127 10.1134/1.2010683 |
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| Keywords | Solar cells Capacitance technique Heterojunction |
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| SubjectTerms | Capacitance technique Heterojunction Solar cells |
| Title | Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy |
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