Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films

Hall effect around a grain boundary in a polycrystalline semiconductor film. [Display omitted] ► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation...

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Vydáno v:Solid-state electronics Ročník 63; číslo 1; s. 137 - 139
Hlavní autoři: Kimura, Mutsumi, Hirako, Masaaki, Yamaoka, Toshifumi, Tani, Satoshi
Médium: Journal Article
Jazyk:angličtina
Vydáno: Kidlington Elsevier Ltd 01.09.2011
Elsevier
Témata:
Algorithms
Applied sciences
Carrier transport
Computer simulation
Electronics
Exact sciences and technology
Finite difference method
Grain boundaries
Grain boundary
Hall effect
Lorentz force
Materials
Polycrystalline semiconductor
Semiconductor film
Semiconductors
Simulation algorithm
Voltage
Polycrystalline semiconductor
Semiconductor film
Simulation algorithm
Hall effect
Lorentz force
Carrier transport
Grain boundary
Semiconductor thin films
Polycrystal
Algorithm
Drift current
Transport process
Diffusion current
Finite difference method
ISSN:0038-1101, 1879-2405
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Shrnutí:Hall effect around a grain boundary in a polycrystalline semiconductor film. [Display omitted] ► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation algorithm is implemented in finite difference methods. ► Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example. ► It is found that a high Hall voltage is generated at the grain boundary. We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. The Lorentz current is discretized with the drift and diffusion currents, and the simulation algorithm is implemented in finite difference methods. Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example, and it is found that a high Hall voltage is generated at the grain boundary.
Bibliografie:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2011.05.022