Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films

Hall effect around a grain boundary in a polycrystalline semiconductor film. [Display omitted] ► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation...

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Vydáno v:	Solid-state electronics Ročník 63; číslo 1; s. 137 - 139
Hlavní autoři:	Kimura, Mutsumi, Hirako, Masaaki, Yamaoka, Toshifumi, Tani, Satoshi
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Kidlington Elsevier Ltd 01.09.2011 Elsevier
Témata:	Algorithms Applied sciences Carrier transport Computer simulation Electronics Exact sciences and technology Finite difference method Grain boundaries Grain boundary Hall effect Lorentz force Materials Polycrystalline semiconductor Semiconductor film Semiconductors Simulation algorithm Voltage Polycrystalline semiconductor Semiconductor film Simulation algorithm Hall effect Lorentz force Carrier transport Grain boundary Semiconductor thin films Polycrystal Algorithm Drift current Transport process Diffusion current Finite difference method
ISSN:	0038-1101, 1879-2405
On-line přístup:	Získat plný text
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