Projected Mushroom Type Phase‐Change Memory

Phase‐change memory devices have found applications in in‐memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resi...

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Vydané v:	Advanced functional materials Ročník 31; číslo 49
Hlavní autori:	Ghazi Sarwat, Syed, Philip, Timothy M., Chen, Ching‐Tzu, Kersting, Benedikt, Bruce, Robert L., Cheng, Cheng‐Wei, Li, Ning, Saulnier, Nicole, BrightSky, Matthew, Sebastian, Abu
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Hoboken Wiley Subscription Services, Inc 01.12.2021
Predmet:	circuit model computational‐memory Computer architecture Configurations Impact resistance Materials science Memory devices Mushrooms nano‐fabrication Phase change materials projected phase‐change memory
ISSN:	1616-301X, 1616-3028
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Abstract	Phase‐change memory devices have found applications in in‐memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here, the projection mechanism in a prominent phase‐change memory device architecture, namely mushroom‐type phase‐change memory, is investigated. Using nanoscale projected Ge2Sb2Te5 devices, the key attributes of state‐dependent resistance, drift coefficients, and phase configurations are studied, and using them how these devices fundamentally work is understood. Nonvolatile memory devices, which can both store and compute information are emerging building blocks for brain‐inspired and in‐memory computing. Here, the nuts and bolts of a “projected” mushroom type phase change computational device that can decouple the device's readout characteristics from the noisy properties of the phase change material are discussed.
AbstractList	Phase‐change memory devices have found applications in in‐memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here, the projection mechanism in a prominent phase‐change memory device architecture, namely mushroom‐type phase‐change memory, is investigated. Using nanoscale projected Ge2Sb2Te5 devices, the key attributes of state‐dependent resistance, drift coefficients, and phase configurations are studied, and using them how these devices fundamentally work is understood. Phase‐change memory devices have found applications in in‐memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here, the projection mechanism in a prominent phase‐change memory device architecture, namely mushroom‐type phase‐change memory, is investigated. Using nanoscale projected Ge 2 Sb 2 Te 5 devices, the key attributes of state‐dependent resistance, drift coefficients, and phase configurations are studied, and using them how these devices fundamentally work is understood. Phase‐change memory devices have found applications in in‐memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here, the projection mechanism in a prominent phase‐change memory device architecture, namely mushroom‐type phase‐change memory, is investigated. Using nanoscale projected Ge2Sb2Te5 devices, the key attributes of state‐dependent resistance, drift coefficients, and phase configurations are studied, and using them how these devices fundamentally work is understood. Nonvolatile memory devices, which can both store and compute information are emerging building blocks for brain‐inspired and in‐memory computing. Here, the nuts and bolts of a “projected” mushroom type phase change computational device that can decouple the device's readout characteristics from the noisy properties of the phase change material are discussed.
Author	Philip, Timothy M. Li, Ning Saulnier, Nicole Kersting, Benedikt Cheng, Cheng‐Wei Bruce, Robert L. Sebastian, Abu BrightSky, Matthew Chen, Ching‐Tzu Ghazi Sarwat, Syed
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Cites_doi	10.1021/nl201040y 10.1109/JPROC.2010.2070050 10.1080/02670836.2017.1341723 10.1063/1.5080959 10.1016/j.micpro.2019.01.009 10.1063/5.0031947 10.1038/s41928-018-0092-2 10.1016/j.sse.2010.04.020 10.1103/PhysRevB.79.165206 10.1126/science.aay0291 10.1109/LED.2008.2010004 10.1109/ICETEEEM.2012.6494522 10.1063/1.2773688 10.1039/C8TC00222C 10.1038/s41598-020-64826-3 10.1109/JPROC.2018.2790840 10.1021/acs.nanolett.7b00909 10.1063/1.5042413 10.1063/1.5004118 10.1016/S1658-3655(12)60012-0 10.1038/s41598-016-0001-8 10.1109/ESSDERC.2016.7599664 10.3390/app8081238 10.1088/1361-6463/ab37b6 10.1063/1.3653279 10.1126/science.1201938 10.1038/ncomms9181 10.1103/PhysRevB.78.035308 10.1088/1361-6463/ab7794 10.1021/acsami.8b18473 10.1038/s41565-020-0655-z 10.1063/1.3304167 10.1038/s41928-017-0006-8 10.1021/nl3038097 10.1002/aelm.201900198 10.1116/1.2699254
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References	2010; 12 2010; 98 2010; 54 2007; 102 2015; 6 2019; 5 2018; 106 2012 2019; 52 2019; 11 2018; 124 2021; 129 2020; 15 2019; 366 2007 2008; 78 2011; 12 2020; 10 2011; 332 2011; 110 2018; 6 2016; 6 2009; 79 2018; 8 2009; 30 2020; 53 2018; 1 2017; 17 2013; 13 2021 2017; 33 2019; 67 2019; 114 2016 2013 2017; 122 2009; 2 2010; 96 2007; 25 e_1_2_8_28_1 Burr G. W. (e_1_2_8_30_1) 2019; 52 e_1_2_8_24_1 Kim W. (e_1_2_8_27_1) 2016 e_1_2_8_25_1 Wong H. (e_1_2_8_31_1) 2010; 12 e_1_2_8_3_1 e_1_2_8_2_1 e_1_2_8_5_1 e_1_2_8_4_1 e_1_2_8_7_1 e_1_2_8_6_1 e_1_2_8_9_1 e_1_2_8_8_1 e_1_2_8_20_1 e_1_2_8_43_1 e_1_2_8_21_1 e_1_2_8_42_1 e_1_2_8_22_1 Bruce R. (e_1_2_8_29_1) 2021 e_1_2_8_45_1 e_1_2_8_23_1 Holm R. (e_1_2_8_33_1) e_1_2_8_44_1 e_1_2_8_1_1 e_1_2_8_41_1 e_1_2_8_40_1 e_1_2_8_17_1 Kim S. (e_1_2_8_26_1) 2013 e_1_2_8_18_1 e_1_2_8_39_1 e_1_2_8_19_1 e_1_2_8_13_1 e_1_2_8_36_1 e_1_2_8_35_1 e_1_2_8_15_1 e_1_2_8_38_1 e_1_2_8_16_1 e_1_2_8_37_1 Le Gallo M. (e_1_2_8_14_1) 2016 e_1_2_8_32_1 e_1_2_8_10_1 e_1_2_8_11_1 e_1_2_8_34_1 e_1_2_8_12_1
References_xml	– start-page: 373 year: 2016 end-page: 376 – volume: 17 start-page: 3688 year: 2017 publication-title: Nano Lett. – volume: 106 start-page: 260 year: 2018 publication-title: Proc. IEEE – volume: 52 year: 2019 publication-title: J. Phys. D: Appl. Phys. – volume: 78 year: 2008 publication-title: Phys. Rev. B – volume: 96 year: 2010 publication-title: Appl. Phys. Lett. – volume: 6 start-page: 1 year: 2016 publication-title: Sci. Rep. – year: 2007 – volume: 110 year: 2011 publication-title: J. Appl. Phys. – volume: 11 start-page: 5336 year: 2019 publication-title: ACS Appl. Mater. Interfaces – volume: 30 start-page: 126 year: 2009 publication-title: IEEE Electron Device Lett. – start-page: 1 year: 2021 end-page: 6 – volume: 98 start-page: 2201 year: 2010 publication-title: Proc. IEEE – volume: 33 start-page: 1890 year: 2017 publication-title: Mater. Sci. Technol. – volume: 12 year: 2010 publication-title: Proc. IEEE – volume: 12 start-page: 2179 year: 2011 publication-title: Nano Lett. – volume: 10 start-page: 8248 year: 2020 publication-title: Sci. Rep. – volume: 366 start-page: 210 year: 2019 publication-title: Science – volume: 13 start-page: 464 year: 2013 publication-title: Nano Lett. – volume: 52 start-page: 47 year: 2019 publication-title: J. Phys. D: Appl. Phys. – start-page: 30 year: 2013 end-page: 37 – volume: 2 start-page: 94 year: 2009 publication-title: J. Taibah Univ. Sci. – year: 2016 – volume: 79 year: 2009 publication-title: Phys. Rev. B – year: 2012 – volume: 6 start-page: 8181 year: 2015 publication-title: Nat. Commun. – volume: 25 start-page: 330 year: 2007 publication-title: J. Vacuum Sci. Technol. A – volume: 1 start-page: 22 year: 2018 publication-title: Nat. Electron. – volume: 1 start-page: 333 year: 2018 publication-title: Nat. Electron. – volume: 124 year: 2018 publication-title: J. Appl. Phys. – volume: 332 start-page: 568 year: 2011 publication-title: Science – volume: 15 start-page: 529 year: 2020 publication-title: Nat. Nanotechnol. – volume: 5 year: 2019 publication-title: Adv. Electron. Mater. – volume: 114 year: 2019 publication-title: Appl. Phys. Lett. – volume: 67 start-page: 28 year: 2019 publication-title: Microprocess. Microsyst. – volume: 102 year: 2007 publication-title: J. Appl. Phys. – volume: 6 start-page: 3387 year: 2018 publication-title: J. Mater. Chem. C – volume: 8 start-page: 1238 year: 2018 publication-title: Appl. Sci. – volume: 129 year: 2021 publication-title: J. Appl. Phys. – volume: 54 start-page: 991 year: 2010 publication-title: Solid‐State Electron. – volume: 53 year: 2020 publication-title: J. Phys. D: Appl. Phys. – volume: 122 year: 2017 publication-title: J. Appl. Phys. – ident: e_1_2_8_6_1 doi: 10.1021/nl201040y – ident: e_1_2_8_8_1 doi: 10.1109/JPROC.2010.2070050 – volume-title: Electric Contacts Theory and Application ident: e_1_2_8_33_1 – ident: e_1_2_8_18_1 doi: 10.1080/02670836.2017.1341723 – ident: e_1_2_8_37_1 – ident: e_1_2_8_41_1 doi: 10.1063/1.5080959 – volume: 52 start-page: 47 year: 2019 ident: e_1_2_8_30_1 publication-title: J. Phys. D: Appl. Phys. – ident: e_1_2_8_3_1 doi: 10.1016/j.micpro.2019.01.009 – ident: e_1_2_8_23_1 doi: 10.1063/5.0031947 – ident: e_1_2_8_2_1 doi: 10.1038/s41928-018-0092-2 – ident: e_1_2_8_43_1 doi: 10.1016/j.sse.2010.04.020 – ident: e_1_2_8_13_1 doi: 10.1103/PhysRevB.79.165206 – volume-title: Int. Electron Devices Meeting (IEDM) year: 2016 ident: e_1_2_8_27_1 – ident: e_1_2_8_20_1 doi: 10.1126/science.aay0291 – ident: e_1_2_8_32_1 doi: 10.1109/LED.2008.2010004 – ident: e_1_2_8_38_1 doi: 10.1109/ICETEEEM.2012.6494522 – ident: e_1_2_8_44_1 doi: 10.1063/1.2773688 – start-page: 1 volume-title: IEEE Int. Reliability Physics Symp. (IPRS) year: 2021 ident: e_1_2_8_29_1 – ident: e_1_2_8_19_1 doi: 10.1039/C8TC00222C – ident: e_1_2_8_25_1 doi: 10.1038/s41598-020-64826-3 – ident: e_1_2_8_7_1 doi: 10.1109/JPROC.2018.2790840 – ident: e_1_2_8_28_1 – ident: e_1_2_8_40_1 – ident: e_1_2_8_11_1 doi: 10.1021/acs.nanolett.7b00909 – volume: 12 year: 2010 ident: e_1_2_8_31_1 publication-title: Proc. IEEE – ident: e_1_2_8_5_1 doi: 10.1063/1.5042413 – ident: e_1_2_8_35_1 doi: 10.1063/1.5004118 – ident: e_1_2_8_39_1 doi: 10.1016/S1658-3655(12)60012-0 – ident: e_1_2_8_10_1 doi: 10.1038/s41598-016-0001-8 – start-page: 373 volume-title: 2016 46th European Solid‐State Device Research Conf. (ESSDERC) year: 2016 ident: e_1_2_8_14_1 doi: 10.1109/ESSDERC.2016.7599664 – ident: e_1_2_8_42_1 doi: 10.3390/app8081238 – ident: e_1_2_8_17_1 doi: 10.1088/1361-6463/ab37b6 – ident: e_1_2_8_34_1 doi: 10.1063/1.3653279 – ident: e_1_2_8_9_1 doi: 10.1126/science.1201938 – start-page: 30 volume-title: Int. Electron Devices Meeting (IEDM) year: 2013 ident: e_1_2_8_26_1 – ident: e_1_2_8_24_1 doi: 10.1038/ncomms9181 – ident: e_1_2_8_45_1 doi: 10.1103/PhysRevB.78.035308 – ident: e_1_2_8_12_1 doi: 10.1088/1361-6463/ab7794 – ident: e_1_2_8_22_1 doi: 10.1021/acsami.8b18473 – ident: e_1_2_8_4_1 doi: 10.1038/s41565-020-0655-z – ident: e_1_2_8_15_1 doi: 10.1063/1.3304167 – ident: e_1_2_8_1_1 doi: 10.1038/s41928-017-0006-8 – ident: e_1_2_8_21_1 doi: 10.1021/nl3038097 – ident: e_1_2_8_16_1 doi: 10.1002/aelm.201900198 – ident: e_1_2_8_36_1 doi: 10.1116/1.2699254
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Snippet	Phase‐change memory devices have found applications in in‐memory computing where the physical attributes of these devices are exploited to compute in places...
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SubjectTerms	circuit model computational‐memory Computer architecture Configurations Impact resistance Materials science Memory devices Mushrooms nano‐fabrication Phase change materials projected phase‐change memory
Title	Projected Mushroom Type Phase‐Change Memory
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