Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing

High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simulta...

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Vydáno v:	Plasma processes and polymers Ročník 16; číslo 9
Hlavní autoři:	Park, Seolhye, Kyung, Yunyoung, Lee, Juyoung, Jang, Yongsuk, Cha, Taewon, Noh, Yeongil, Choi, Younghoon, Kim, Byungsoo, Cho, Taeyoung, Seo, Rabul, Yang, Jae‐Ho, Jang, Yunchang, Ryu, Sangwon, Kim, Gon‐Ho
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Weinheim Wiley Subscription Services, Inc 01.09.2019
Témata:	Algorithms Aspect ratio cause analysis dry etch Etching fault prediction Ion flux Manufacturing Mass production Optical emission spectroscopy Organic light emitting diodes plasma information virtual metrology
ISSN:	1612-8850, 1612-8869
On-line přístup:	Získat plný text
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