Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing

High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simulta...

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Vydané v:	Plasma processes and polymers Ročník 16; číslo 9
Hlavní autori:	Park, Seolhye, Kyung, Yunyoung, Lee, Juyoung, Jang, Yongsuk, Cha, Taewon, Noh, Yeongil, Choi, Younghoon, Kim, Byungsoo, Cho, Taeyoung, Seo, Rabul, Yang, Jae‐Ho, Jang, Yunchang, Ryu, Sangwon, Kim, Gon‐Ho
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Weinheim Wiley Subscription Services, Inc 01.09.2019
Predmet:	Algorithms Aspect ratio cause analysis dry etch Etching fault prediction Ion flux Manufacturing Mass production Optical emission spectroscopy Organic light emitting diodes plasma information virtual metrology
ISSN:	1612-8850, 1612-8869
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Abstract	High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simultaneously. To analyze the cause of HARC process failures, plasma information (PI)‐based virtual metrology (VM) algorithm was developed by using the equipment engineering system and the optical emission spectroscopy data recorded from the fab. Developed PI‐VM could predict the process faults with >90% of the accuracy, and the cause analysis function was also validated. We could suggest a right solution to the failure, and more efficient management of the OLED display manufacturing was possible. Highly contributed plasma information (PI) parameters to the decision of process failed and succeeded glasses in the virtual metrology model were applied to the root cause analysis of the high‐aspect ratio contact (HARC) etching process faults. Analyzed causes could be a guideline of the mass production control and management in the organic light emitting diodes (OLED) display manufacturing fab.
AbstractList	High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simultaneously. To analyze the cause of HARC process failures, plasma information (PI)‐based virtual metrology (VM) algorithm was developed by using the equipment engineering system and the optical emission spectroscopy data recorded from the fab. Developed PI‐VM could predict the process faults with >90% of the accuracy, and the cause analysis function was also validated. We could suggest a right solution to the failure, and more efficient management of the OLED display manufacturing was possible. High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simultaneously. To analyze the cause of HARC process failures, plasma information (PI)‐based virtual metrology (VM) algorithm was developed by using the equipment engineering system and the optical emission spectroscopy data recorded from the fab. Developed PI‐VM could predict the process faults with >90% of the accuracy, and the cause analysis function was also validated. We could suggest a right solution to the failure, and more efficient management of the OLED display manufacturing was possible. Highly contributed plasma information (PI) parameters to the decision of process failed and succeeded glasses in the virtual metrology model were applied to the root cause analysis of the high‐aspect ratio contact (HARC) etching process faults. Analyzed causes could be a guideline of the mass production control and management in the organic light emitting diodes (OLED) display manufacturing fab.
Author	Kyung, Yunyoung Jang, Yunchang Park, Seolhye Lee, Juyoung Seo, Rabul Jang, Yongsuk Choi, Younghoon Kim, Byungsoo Ryu, Sangwon Noh, Yeongil Kim, Gon‐Ho Cha, Taewon Cho, Taeyoung Yang, Jae‐Ho
Author_xml	– sequence: 1 givenname: Seolhye orcidid: 0000-0002-5957-1532 surname: Park fullname: Park, Seolhye email: druyvesteyndf@gmail.com organization: Samsung Display Co., Ltd – sequence: 2 givenname: Yunyoung surname: Kyung fullname: Kyung, Yunyoung organization: Samsung Display Co., Ltd – sequence: 3 givenname: Juyoung surname: Lee fullname: Lee, Juyoung organization: Samsung Display Co., Ltd – sequence: 4 givenname: Yongsuk surname: Jang fullname: Jang, Yongsuk organization: Samsung Display Co., Ltd – sequence: 5 givenname: Taewon surname: Cha fullname: Cha, Taewon organization: Samsung Display Co., Ltd – sequence: 6 givenname: Yeongil surname: Noh fullname: Noh, Yeongil organization: Samsung Display Co., Ltd – sequence: 7 givenname: Younghoon surname: Choi fullname: Choi, Younghoon organization: Samsung Display Co., Ltd – sequence: 8 givenname: Byungsoo surname: Kim fullname: Kim, Byungsoo organization: Samsung Display Co., Ltd – sequence: 9 givenname: Taeyoung surname: Cho fullname: Cho, Taeyoung organization: Samsung Display Co., Ltd – sequence: 10 givenname: Rabul surname: Seo fullname: Seo, Rabul organization: Samsung Display Co., Ltd – sequence: 11 givenname: Jae‐Ho surname: Yang fullname: Yang, Jae‐Ho organization: Samsung Display Co., Ltd – sequence: 12 givenname: Yunchang surname: Jang fullname: Jang, Yunchang organization: Seoul National University – sequence: 13 givenname: Sangwon surname: Ryu fullname: Ryu, Sangwon organization: Seoul National University – sequence: 14 givenname: Gon‐Ho surname: Kim fullname: Kim, Gon‐Ho organization: Seoul National University
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Snippet	High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC...
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SubjectTerms	Algorithms Aspect ratio cause analysis dry etch Etching fault prediction Ion flux Manufacturing Mass production Optical emission spectroscopy Organic light emitting diodes plasma information virtual metrology
Title	Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing
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