Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of...

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Vydané v:	2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS) s. 1 - 6
Hlavní autori:	Luza, Lucas Matana, Soderstrom, Daniel, Puchner, Helmut, Alia, Ruben Garcia, Letiche, Manon, Bosio, Alberto, Dilillo, Luigi
Médium:	Konferenčný príspevok..
Jazyk:	English
Vydavateľské údaje:	IEEE 01.04.2020
Predmet:	Diffusion tensor imaging DRAM HyperRAM irradiation Nanoscale devices neutron Neutrons Radiation effects Random access memory SEE Self-Refresh
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