Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of...

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Vydáno v:2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS) s. 1 - 6
Hlavní autoři: Luza, Lucas Matana, Soderstrom, Daniel, Puchner, Helmut, Alia, Ruben Garcia, Letiche, Manon, Bosio, Alberto, Dilillo, Luigi
Médium: Konferenční příspěvek
Jazyk:angličtina
Vydáno: IEEE 01.04.2020
Témata:
Diffusion tensor imaging
DRAM
HyperRAM
irradiation
Nanoscale devices
neutron
Neutrons
Radiation effects
Random access memory
SEE
Self-Refresh
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Shrnutí:In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.
DOI:10.1109/DTIS48698.2020.9080918