Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of...

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Published in:2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1 - 6
Main Authors: Luza, Lucas Matana, Soderstrom, Daniel, Puchner, Helmut, Alia, Ruben Garcia, Letiche, Manon, Bosio, Alberto, Dilillo, Luigi
Format: Conference Proceeding
Language:English
Published: IEEE 01.04.2020
Subjects:
Diffusion tensor imaging
DRAM
HyperRAM
irradiation
Nanoscale devices
neutron
Neutrons
Radiation effects
Random access memory
SEE
Self-Refresh
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Abstract In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.
AbstractList In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.
Author Bosio, Alberto
Soderstrom, Daniel
Alia, Ruben Garcia
Puchner, Helmut
Dilillo, Luigi
Letiche, Manon
Luza, Lucas Matana
Author_xml – sequence: 1
  givenname: Lucas Matana
  surname: Luza
  fullname: Luza, Lucas Matana
  organization: University of Montpellier,LIRMM,Montpellier,France
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  givenname: Daniel
  surname: Soderstrom
  fullname: Soderstrom, Daniel
  organization: University of Jyväskylä,Department of Physics,Jyväskylä,Finland
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  givenname: Helmut
  surname: Puchner
  fullname: Puchner, Helmut
  organization: Cypress Semiconductor,San Jose,USA
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  givenname: Ruben Garcia
  surname: Alia
  fullname: Alia, Ruben Garcia
  organization: CERN,Engineering Department,Geneva,Switzerland
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  givenname: Manon
  surname: Letiche
  fullname: Letiche, Manon
  organization: Institut Laue-Langevin,Grenoble,France
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  givenname: Alberto
  surname: Bosio
  fullname: Bosio, Alberto
  organization: Lyon Institute of Nanotechnology,École Centrale de Lyon,France
– sequence: 7
  givenname: Luigi
  surname: Dilillo
  fullname: Dilillo, Luigi
  organization: University of Montpellier,LIRMM,Montpellier,France
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Snippet In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced...
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SubjectTerms Diffusion tensor imaging
DRAM
HyperRAM
irradiation
Nanoscale devices
neutron
Neutrons
Radiation effects
Random access memory
SEE
Self-Refresh
Title Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM
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