Ultrawide-bandgap semiconductors: An overview

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spann...

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Bibliographic Details
Published in:Journal of materials research Vol. 36; no. 23; pp. 4601 - 4615
Main Authors: Wong, Man Hoi, Bierwagen, Oliver, Kaplar, Robert J., Umezawa, Hitoshi
Format: Journal Article
Language:English
Published: Cham Springer International Publishing 14.12.2021
Springer Nature B.V
Springer Nature
Subjects:
Aluminum
Aluminum gallium nitrides
Applied and Technical Physics
Biomaterials
Boron nitride
Carbon
Chemical vapor deposition
Chemistry and Materials Science
Crystal defects
Diamonds
Electric fields
Electric vehicles
Electronic devices
Emitters
Energy gap
Gallium oxides
Heat conductivity
Inorganic Chemistry
Materials Engineering
Materials research
MATERIALS SCIENCE
Microscopy
Molecular beam epitaxy
Nanotechnology
Optoelectronic devices
Optoelectronics
Organic chemicals
Overview
Physics
Semiconductors
Substrates
ISSN:0884-2914, 2044-5326
Online Access:Get full text
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Summary:Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (Al x Ga 1– x N), boron nitride (BN), diamond, β -phase gallium oxide ( β -Ga 2 O 3 ), and a number of other UWBG binary and ternary oxides. Graphical Abstract
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content type line 14
SAND2021-15989J
NA0003525
USDOE Office of Science (SC), Basic Energy Sciences (BES)
USDOE National Nuclear Security Administration (NNSA)
ISSN:0884-2914
2044-5326
DOI:10.1557/s43578-021-00458-1