A High-Density 45 nm SRAM Using Small-Signal Non-Strobed Regenerative Sensing

High-density SRAMs utilize aggressively small bit-cells, which are subject to extreme variability, degrading their read SNM and read-current. Additionally, array performance is also limited by sense-amplifier offset and strobe-timing uncertainty. This paper, presents a sense-amplifier that targets a...

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Veröffentlicht in:	IEEE journal of solid-state circuits Jg. 44; H. 1; S. 163 - 173
Hauptverfasser:	Verma, N., Chandrakasan, A.P.
Format:	Journal Article Tagungsbericht
Sprache:	Englisch
Veröffentlicht:	New York, NY IEEE 01.01.2009 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:	Access time Applied sciences Arrays Auto-zeroing CMOS technology Compensation Degradation Design. Technologies. Operation analysis. Testing Detection device variation Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Energy consumption Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Manufacturing offset compensation Offsets Performance degradation Prototypes Random access memory Regenerative Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices sense-amplifier SRAM Target tracking Topology Uncertainty Voltage Performance evaluation offset compensation Static random access memory Access time Prototype High density Small signal behavior Random access memory Auto-zeroing sense-amplifier Regenerative process Mismatching SRAM Optimization Sense amplifier Trigger Voltage standard device variation Complementary MOS technology Integrated circuit Low-power electronics Signal detection Damaging
ISSN:	0018-9200, 1558-173X
Online-Zugang:	Volltext
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