Control of the antiferromagnetic domain configuration and Néel axis orientation with epitaxial strain

In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical for technological implementations. Here we show by X-ray magnetic linear dichroism in photoelectron emission microscopy how antiferromagneti...

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Published in:Communications materials Vol. 6; no. 1; pp. 153 - 10
Main Authors: Polewczyk, Vincent, Petrov, Aleksandr Yu, Sarpi, Brice, Backes, Dirk, Elnaggar, Hebatalla, Wadhwa, Payal, Filippetti, Alessio, Rossi, Giorgio, Torelli, Piero, Vinai, Giovanni, Maccherozzi, Francesco, Davidson, Bruce A.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 18.07.2025
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Nature
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Subjects:
639/301/119/995
639/301/119/997
Antiferromagnetism
Chemistry and Materials Science
Compressive properties
Condensed Matter
Configurations
Crystallography
Dichroism
Electrons
Emission microscopy
Epitaxial growth
Ferrites
Lanthanum compounds
Magnetic properties
Materials Science
Molecular beam epitaxy
Photoelectrons
Physics
Symmetry
Tensile strain
Thin films
ISSN:2662-4443, 2662-4443
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Abstract In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical for technological implementations. Here we show by X-ray magnetic linear dichroism in photoelectron emission microscopy how antiferromagnetic properties of LaFeO 3 (LFO) thin films can be tailored through epitaxial strain. LFO films were grown via molecular beam epitaxy with precise stoichiometric control, using substrates that span a range of strain states—from compressive to tensile—and crystal symmetries, including different crystallographic orientations. First, we show that epitaxial strain dictates the Néel axis orientation, shifting it from completely in-plane under compressive strain to completely out-of-plane under tensile strain, regardless of the substrate crystal symmetry. Second, we find that LFO films grown on cubic substrates exhibit a fourfold distribution of antiferromagnetic domains, but can be controlled by varying the substrate miscut, while those on orthorhombic substrates, regardless of strain state, form large-scale monodomains, a highly desirable feature for spintronic applications. Precise control over antiferromagnetic domain configurations and Néel axis orientation is essential for technological advancement of spintronic devices. Here, the authors use epitaxial strain to tailor the magnetic properties of LaFeO 3 thin films, demonstrating a crystal engineering approach which may have much wider applicability.
AbstractList In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical for technological implementations. Here we show by X-ray magnetic linear dichroism in photoelectron emission microscopy how antiferromagnetic properties of LaFeO 3 (LFO) thin films can be tailored through epitaxial strain. LFO films were grown via molecular beam epitaxy with precise stoichiometric control, using substrates that span a range of strain states—from compressive to tensile—and crystal symmetries, including different crystallographic orientations. First, we show that epitaxial strain dictates the Néel axis orientation, shifting it from completely in-plane under compressive strain to completely out-of-plane under tensile strain, regardless of the substrate crystal symmetry. Second, we find that LFO films grown on cubic substrates exhibit a fourfold distribution of antiferromagnetic domains, but can be controlled by varying the substrate miscut, while those on orthorhombic substrates, regardless of strain state, form large-scale monodomains, a highly desirable feature for spintronic applications. Precise control over antiferromagnetic domain configurations and Néel axis orientation is essential for technological advancement of spintronic devices. Here, the authors use epitaxial strain to tailor the magnetic properties of LaFeO 3 thin films, demonstrating a crystal engineering approach which may have much wider applicability.
In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical for technological implementations. Here we show by X-ray magnetic linear dichroism in photoelectron emission microscopy how antiferromagnetic properties of LaFeO3 (LFO) thin films can be tailored through epitaxial strain. LFO films were grown via molecular beam epitaxy with precise stoichiometric control, using substrates that span a range of strain states—from compressive to tensile—and crystal symmetries, including different crystallographic orientations. First, we show that epitaxial strain dictates the Néel axis orientation, shifting it from completely in-plane under compressive strain to completely out-of-plane under tensile strain, regardless of the substrate crystal symmetry. Second, we find that LFO films grown on cubic substrates exhibit a fourfold distribution of antiferromagnetic domains, but can be controlled by varying the substrate miscut, while those on orthorhombic substrates, regardless of strain state, form large-scale monodomains, a highly desirable feature for spintronic applications.Precise control over antiferromagnetic domain configurations and Néel axis orientation is essential for technological advancement of spintronic devices. Here, the authors use epitaxial strain to tailor the magnetic properties of LaFeO3 thin films, demonstrating a crystal engineering approach which may have much wider applicability.
Abstract In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical for technological implementations. Here we show by X-ray magnetic linear dichroism in photoelectron emission microscopy how antiferromagnetic properties of LaFeO3 (LFO) thin films can be tailored through epitaxial strain. LFO films were grown via molecular beam epitaxy with precise stoichiometric control, using substrates that span a range of strain states—from compressive to tensile—and crystal symmetries, including different crystallographic orientations. First, we show that epitaxial strain dictates the Néel axis orientation, shifting it from completely in-plane under compressive strain to completely out-of-plane under tensile strain, regardless of the substrate crystal symmetry. Second, we find that LFO films grown on cubic substrates exhibit a fourfold distribution of antiferromagnetic domains, but can be controlled by varying the substrate miscut, while those on orthorhombic substrates, regardless of strain state, form large-scale monodomains, a highly desirable feature for spintronic applications.
In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical for technological implementations. Here we show by X-ray magnetic linear dichroism in photoelectron emission microscopy how antiferromagnetic properties of LaFeO 3 (LFO) thin films can be tailored through epitaxial strain. LFO films were grown via molecular beam epitaxy with precise stoichiometric control, using substrates that span a range of strain states-from compressive to tensile-and crystal symmetries, including different crystallographic orientations. First, we show that epitaxial strain dictates the Néel axis orientation, shifting it from completely in-plane under compressive strain to completely out-of-plane under tensile strain, regardless of the substrate crystal symmetry. Second, we find that LFO films grown on cubic substrates exhibit a fourfold distribution of antiferromagnetic domains, but can be controlled by varying the substrate miscut, while those on orthorhombic substrates, regardless of strain state, form large-scale monodomains, a highly desirable feature for spintronic applications.
ArticleNumber 153
Author Maccherozzi, Francesco
Wadhwa, Payal
Elnaggar, Hebatalla
Vinai, Giovanni
Davidson, Bruce A.
Backes, Dirk
Petrov, Aleksandr Yu
Filippetti, Alessio
Rossi, Giorgio
Polewczyk, Vincent
Torelli, Piero
Sarpi, Brice
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Snippet In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is critical...
Abstract In the growing field of spintronic devices incorporating antiferromagnetic materials, control of the domain configuration and Néel axis orientation is...
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SubjectTerms 639/301/119/995
639/301/119/997
Antiferromagnetism
Chemistry and Materials Science
Compressive properties
Condensed Matter
Configurations
Crystallography
Dichroism
Electrons
Emission microscopy
Epitaxial growth
Ferrites
Lanthanum compounds
Magnetic properties
Materials Science
Molecular beam epitaxy
Photoelectrons
Physics
Symmetry
Tensile strain
Thin films
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Title Control of the antiferromagnetic domain configuration and Néel axis orientation with epitaxial strain
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