Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems

Ferroelectric materials represent a frontier in semiconductor research, offering the potential for novel optoelectronics. AlScN material is a kind of outstanding ferroelectric semiconductor with strong residual polarization, high Curie temperature, and mainstream semiconductor fabrication compatibil...

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Vydané v:	Advanced materials (Weinheim) Ročník 37; číslo 19; s. e2419316 - n/a
Hlavní autori:	Xie, Zhiwei, Jiang, Ke, Zhang, Shanli, Wang, Zhongqiang, Shan, Xuanyu, Wang, Bingxiang, Ben, Jianwei, Liu, Mingrui, Lv, Shunpeng, Chen, Yang, Jia, Yuping, Sun, Xiaojuan, Li, Dabing
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Germany Wiley Subscription Services, Inc 01.05.2025
Predmet:	AlScN Artificial vision Curie temperature Ferroelectric materials Ferroelectricity Gallium nitrides Heterojunctions image sensing and preprocessing in‐memory computing memristor Optoelectronics Semiconductor research ultraviolet optoelectronic synapse Vision systems in‐memory computing AlScN ultraviolet optoelectronic synapse image sensing and preprocessing memristor
ISSN:	0935-9648, 1521-4095, 1521-4095
On-line prístup:	Získať plný text
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