Monolithic integration of four-colour InGaN-based nanocolumn LEDs

The monolithic integration of four-colour indium gallium nitride (InGaN)-based nanocolumn light-emitting diodes (LEDs) is demonstrated. In the integrated nanocolumn LED unit, blue-, sky-blue-, green- and yellow-emitting micro-LEDs (LEDs 1–4) with a 65 μm diameter circular indium tin oxide emission w...

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Vydáno v:	Electronics letters Ročník 51; číslo 11; s. 852 - 854
Hlavní autoři:	Kishino, K, Yanagihara, A, Ikeda, K, Yamano, K
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	The Institution of Engineering and Technology 28.05.2015
Témata:	Arrays blue‐emitting microLED circular indium tin oxide emission window Emission four‐colour InGaN‐based nanocolumn LED gallium compounds Gallium nitrides green‐emitting microLED III‐V semiconductors indium compounds Indium gallium nitrides InGaN‐GaN integrated optoelectronics ITO lattice constant lattice constants Lattice parameters Lattices Light-emitting diodes monolithic integration multiple quantum wells nanoelectronics Nanostructure Photonics semiconductor quantum wells size 65 mum to 231 nm sky‐blue‐emitting microLED triangular lattice wide band gap semiconductors yellow‐emitting microLED gallium compounds multiple quantum wells ITO monolithic integration lattice constant indium compounds integrated optoelectronics light-emitting diodes lattice constants blue-emitting microLED light emitting diodes four-colour InGaN-based nanocolumn LED InGaN-GaN circular indium tin oxide emission window triangular lattice semiconductor quantum wells yellow-emitting microLED nanoelectronics wide band gap semiconductors sky-blue-emitting microLED green-emitting microLED size 65 mum to 231 nm III-V semiconductors
ISSN:	0013-5194, 1350-911X, 1350-911X
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