Thermal stability of oxygen vacancy stabilized zirconia (OVSZ) thin films

Thermal stability of reactive magnetron sputter deposited oxygen vacancy stabilized cubic zirconia (OVSZ) thin films containing 16 and 3 at.% oxygen vacancies is reported. Temperature-resolved grazing incidence X-ray diffraction (TR-GIXRD) measurements (200–900 °C) in air and nitrogen atmosphere wer...

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Vydané v:Surface & coatings technology Ročník 409; s. 126880
Hlavní autori: Raza, Mohsin, Boulet, Pascal, Pierson, Jean-François, Snyders, Rony, Konstantinidis, Stéphanos
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Lausanne Elsevier B.V 15.03.2021
Elsevier BV
Elsevier
Predmet:
Chemical Sciences
Compressive properties
Condensed Matter
Cubic zirconia
Material chemistry
Materials Science
Oxygen
Oxygen vacancy
Phase transformation
Physics
Stress
Substrates
Thermal cycling
Thermal expansion
Thermal stability
Thin films
Vacancies
Zirconium dioxide
Phase transformation
Cubic zirconia
Thermal stability
Stress
Oxygen vacancy
ISSN:0257-8972, 1879-3347, 1879-3347
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Shrnutí:Thermal stability of reactive magnetron sputter deposited oxygen vacancy stabilized cubic zirconia (OVSZ) thin films containing 16 and 3 at.% oxygen vacancies is reported. Temperature-resolved grazing incidence X-ray diffraction (TR-GIXRD) measurements (200–900 °C) in air and nitrogen atmosphere were performed. TR-GIXRD data show that the deposited films are stable up to 750 °C irrespective of the annealing atmosphere or the oxygen vacancy concentration. However, above 750 °C a fraction of zirconia transforms from cubic to monoclinic structure. This structural transition is explained by the compressive stresses, generated as a result of discrepancy in film-substrate thermal expansion coefficients. Thermal cycling of the deposited OVSZ thin films is also performed at 700 °C and show that films retain their initial cubic structure. •Thermal stability of oxygen vacancy stabilized zirconia (OVSZ) thin films is reported.•OVSZ thin films are stable up-to 750 °C irrespective of annealing ambient (N2 or air) or oxygen vacancy concentration.•Mono-clinic peak appear above 750 °C as a result of compressive stresses.
Bibliografia:ObjectType-Article-1
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ISSN:0257-8972
1879-3347
1879-3347
DOI:10.1016/j.surfcoat.2021.126880