Thermal stability of oxygen vacancy stabilized zirconia (OVSZ) thin films

Thermal stability of reactive magnetron sputter deposited oxygen vacancy stabilized cubic zirconia (OVSZ) thin films containing 16 and 3 at.% oxygen vacancies is reported. Temperature-resolved grazing incidence X-ray diffraction (TR-GIXRD) measurements (200–900 °C) in air and nitrogen atmosphere wer...

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Veröffentlicht in:Surface & coatings technology Jg. 409; S. 126880
Hauptverfasser: Raza, Mohsin, Boulet, Pascal, Pierson, Jean-François, Snyders, Rony, Konstantinidis, Stéphanos
Format: Journal Article
Sprache:Englisch
Veröffentlicht: Lausanne Elsevier B.V 15.03.2021
Elsevier BV
Elsevier
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ISSN:0257-8972, 1879-3347, 1879-3347
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Zusammenfassung:Thermal stability of reactive magnetron sputter deposited oxygen vacancy stabilized cubic zirconia (OVSZ) thin films containing 16 and 3 at.% oxygen vacancies is reported. Temperature-resolved grazing incidence X-ray diffraction (TR-GIXRD) measurements (200–900 °C) in air and nitrogen atmosphere were performed. TR-GIXRD data show that the deposited films are stable up to 750 °C irrespective of the annealing atmosphere or the oxygen vacancy concentration. However, above 750 °C a fraction of zirconia transforms from cubic to monoclinic structure. This structural transition is explained by the compressive stresses, generated as a result of discrepancy in film-substrate thermal expansion coefficients. Thermal cycling of the deposited OVSZ thin films is also performed at 700 °C and show that films retain their initial cubic structure. •Thermal stability of oxygen vacancy stabilized zirconia (OVSZ) thin films is reported.•OVSZ thin films are stable up-to 750 °C irrespective of annealing ambient (N2 or air) or oxygen vacancy concentration.•Mono-clinic peak appear above 750 °C as a result of compressive stresses.
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ISSN:0257-8972
1879-3347
1879-3347
DOI:10.1016/j.surfcoat.2021.126880