Thermal stability of oxygen vacancy stabilized zirconia (OVSZ) thin films
Thermal stability of reactive magnetron sputter deposited oxygen vacancy stabilized cubic zirconia (OVSZ) thin films containing 16 and 3 at.% oxygen vacancies is reported. Temperature-resolved grazing incidence X-ray diffraction (TR-GIXRD) measurements (200–900 °C) in air and nitrogen atmosphere wer...
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| Vydáno v: | Surface & coatings technology Ročník 409; s. 126880 |
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| Hlavní autoři: | , , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
| Vydáno: |
Lausanne
Elsevier B.V
15.03.2021
Elsevier BV Elsevier |
| Témata: | |
| ISSN: | 0257-8972, 1879-3347, 1879-3347 |
| On-line přístup: | Získat plný text |
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| Shrnutí: | Thermal stability of reactive magnetron sputter deposited oxygen vacancy stabilized cubic zirconia (OVSZ) thin films containing 16 and 3 at.% oxygen vacancies is reported. Temperature-resolved grazing incidence X-ray diffraction (TR-GIXRD) measurements (200–900 °C) in air and nitrogen atmosphere were performed. TR-GIXRD data show that the deposited films are stable up to 750 °C irrespective of the annealing atmosphere or the oxygen vacancy concentration. However, above 750 °C a fraction of zirconia transforms from cubic to monoclinic structure. This structural transition is explained by the compressive stresses, generated as a result of discrepancy in film-substrate thermal expansion coefficients. Thermal cycling of the deposited OVSZ thin films is also performed at 700 °C and show that films retain their initial cubic structure.
•Thermal stability of oxygen vacancy stabilized zirconia (OVSZ) thin films is reported.•OVSZ thin films are stable up-to 750 °C irrespective of annealing ambient (N2 or air) or oxygen vacancy concentration.•Mono-clinic peak appear above 750 °C as a result of compressive stresses. |
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| Bibliografie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ISSN: | 0257-8972 1879-3347 1879-3347 |
| DOI: | 10.1016/j.surfcoat.2021.126880 |