High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter

•A high-efficiency STPV system was designed and fabricated.•Used a multilayer metal-dielectric coated selective emitter for spectral control.•Quantified optical and thermal losses at various stages of energy conversion.•Overall power conversion efficiency of 8.4% was recorded at 1676 K. In this work...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Solar energy Ročník 197; číslo C; s. 538 - 545
Hlavní autoři: Bhatt, Rajendra, Kravchenko, Ivan, Gupta, Mool
Médium: Journal Article
Jazyk:angličtina
Vydáno: New York Elsevier Ltd 01.02.2020
Pergamon Press Inc
Elsevier
Témata:
Absorbers
Absorptance
Absorptivity
Blackbody
Continuous wave lasers
Design optimization
Efficiency
Emissivity
Emitters
Energy conversion efficiency
Fabrication
Gallium
Gallium antimonide
Gallium antimonides
Incident radiation
Multilayers
Nanostructure
Near infrared radiation
Normalizing
Operating temperature
Optical coatings
Quantum efficiency
Radiation measurement
Semiconductor lasers
Silicon nitride
SOLAR ENERGY
Spectral control
STPV
Substrates
Thin films
TPV cells
Tungsten
Wavelengths
STPV
Blackbody
Nanostructure
Spectral control
TPV cells
ISSN:0038-092X, 1471-1257
On-line přístup:Získat plný text
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
Popis
Shrnutí:•A high-efficiency STPV system was designed and fabricated.•Used a multilayer metal-dielectric coated selective emitter for spectral control.•Quantified optical and thermal losses at various stages of energy conversion.•Overall power conversion efficiency of 8.4% was recorded at 1676 K. In this work, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.
Bibliografie:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
National Science Foundation (NSF)
AC05-00OR22725
National Aeronautic and Space Administration (NASA)
USDOE Office of Science (SC), Basic Energy Sciences (BES)
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2020.01.029