True-Damage-Aware Enumerative Coding for Improving nand Flash Memory Endurance

This brief presents a technique that can fully exploit the data dependency of flash memory cell damage to improve the program/erase (P/E) cycling endurance of nand flash memory. The key is to opportunistically leverage data lossless compressibility and utilize the compression gain to realize memory-...

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Bibliographic Details
Published in:IEEE transactions on very large scale integration (VLSI) systems Vol. 23; no. 6; pp. 1165 - 1169
Main Authors: Li, Jiangpeng, Zhao, Kai, Ma, Jun, Zhang, Tong
Format: Journal Article
Language:English
Published: IEEE 01.06.2015
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ISSN:1063-8210, 1557-9999
Online Access:Get full text
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