Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells

The impact of carbon and oxygen on the performance of high efficiency photovoltaic devices is still poorly understood. As oxygen is one of the dominant impurities present in silicon, various applications require different levels of oxygen to improve the device performance. In this work, we have stud...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Vol. 36; no. 1-3; pp. 63 - 67
Main Authors: Mahfoud, K., Loghmarti, M., Muller, J.C., Siffert, P.
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 01.01.1996
Elsevier
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Doping effects
Electronic transport in condensed matter
Exact sciences and technology
Oxygen
Photoconduction and photovoltaic effects
Photoconduction and photovoltaic effects; photodielectric effects
Physics
Silicon
Solar cells
Solar cells
Oxygen
Silicon
Doping effects
Oxygen additions
Photovoltaic effect
Impurities
Chemical composition
Diffusion
Carbon additions
ISSN:0921-5107, 1873-4944
Online Access:Get full text
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Summary:The impact of carbon and oxygen on the performance of high efficiency photovoltaic devices is still poorly understood. As oxygen is one of the dominant impurities present in silicon, various applications require different levels of oxygen to improve the device performance. In this work, we have studied the effects of the oxygen concentration in silicon on the co-diffusion of phosphorus and aluminium by rapid and conventional processes. We will compare the effectiveness of the co-diffusion of PAl in a variety of silicon materials, as a function of temperature and duration of the thermal process in a classical and a rapid thermal furnace and examine the influence of carbon and oxygen on the gettering efficiency. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon, the influence of which during the thermal cycle is of importance.
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ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(95)01284-2