Optimization of tip material and shape for near-UV TERS in Si structures

High spatial resolution stress mapping of Si device structures is in high demand throughout electronic industry. This problem can be solved by application of the tip‐enhanced Raman scattering (TERS) to Si structures. This work involves searching for a suitable TERS material for the near‐UV spectral...

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Vydané v:	Journal of Raman spectroscopy Ročník 40; číslo 10; s. 1377 - 1385
Hlavní autori:	Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko, Geshev, Pavel
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Chichester, UK John Wiley & Sons, Ltd 01.10.2009
Predmet:	Aluminum Atomic force microscopy Demand Devices Electronics Mapping Searching SERS Silicon stress TERS
ISSN:	0377-0486, 1097-4555
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