Optimization of tip material and shape for near-UV TERS in Si structures

High spatial resolution stress mapping of Si device structures is in high demand throughout electronic industry. This problem can be solved by application of the tip‐enhanced Raman scattering (TERS) to Si structures. This work involves searching for a suitable TERS material for the near‐UV spectral...

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Bibliographic Details

Published in:	Journal of Raman spectroscopy Vol. 40; no. 10; pp. 1377 - 1385
Main Authors:	Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko, Geshev, Pavel
Format:	Journal Article
Language:	English
Published:	Chichester, UK John Wiley & Sons, Ltd 01.10.2009
Subjects:	Aluminum Atomic force microscopy Demand Devices Electronics Mapping Searching SERS Silicon stress TERS
ISSN:	0377-0486, 1097-4555
Online Access:	Get full text
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