Rapid thermal annealing of thin doped and undoped spin-on glass films

Rapid thermal annealing (RTA) was investigated for curing doped and undoped spin-on glass films deposited onto silicon substrates. The annealed undoped spin-on glass (SOG) films present an important densification of the layers as a function of temperature and a reduction in the interfacial state den...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Jg. 31; H. 3; S. 319 - 326
Hauptverfasser: Ventura, L., Slaoui, A., Muller, J.c., Siffert, P.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: Amsterdam Elsevier B.V 01.05.1995
Elsevier
Schlagworte:
Annealing
Cross-disciplinary physics: materials science; rheology
Diffusion
Doping effects
Exact sciences and technology
Materials science
Physics
Silicon
Surface treatments
Annealing
Silicon
Doping effects
Diffusion
Solar cells
Thin films
Fabrication
Densification
Temperature effects
Surfaces
Surface layers
Deposition
Passivation
ISSN:0921-5107, 1873-4944
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Zusammenfassung:Rapid thermal annealing (RTA) was investigated for curing doped and undoped spin-on glass films deposited onto silicon substrates. The annealed undoped spin-on glass (SOG) films present an important densification of the layers as a function of temperature and a reduction in the interfacial state density. The possibility of using rapid thermally annealed spin-on doped glass (SOD) films as a doping source as well as a surface passivation layer was investigated. The results show that the combination of spin-on film (after dilution of the solution with methanol) deposition and RTA can produce shallow lightly doped emitters. Sheet resistances lower than 150 Ω/□ are easily reached. Moreover, the minority-carrier diffusion length is improved owing to the gettering effect induced by phosphorus diffusion. The use as a passivation layer of the SOG or the remaining SOD oxide film makes this technique favourable for applications such as the fabrication of solar cells.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)01161-3