CdS Nanoscale Photodetectors

CdS nanostructures have received much attention in recent years as building blocks for optoelectronic devices due to their unique physical and chemical properties. This progress report provides an overview of recent research about rational design of CdS nanoscale photodetectors. Three kinds of photo...

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Vydáno v:Advanced materials (Weinheim) Ročník 26; číslo 17; s. 2619 - 2635
Hlavní autoři: Deng, Kaimo, Li, Liang
Médium: Journal Article
Jazyk:angličtina
Vydáno: Germany Blackwell Publishing Ltd 01.05.2014
Témata:
Cadmium sulfides
CdS
Contact
Contact resistance
Doping
Heterojunctions
nanoscale
Nanostructure
nanostructures
optical sensors
Photodetectors
Tuning
photodetectors
nanoscale
CdS
optical sensors
nanostructures
ISSN:0935-9648, 1521-4095, 1521-4095
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Shrnutí:CdS nanostructures have received much attention in recent years as building blocks for optoelectronic devices due to their unique physical and chemical properties. This progress report provides an overview of recent research about rational design of CdS nanoscale photodetectors. Three kinds of photodetectors according to the metal‐semiconductor contact types are discussed in detail: Ohmic contact, Schottky contact, and field enhanced transistor configuration. The focus is on the tuning of optical and electrical properties CdS nanostructures by element doping, composition and bandgap engineering, and heterojunction integration, along with thus modified device performances generated during these tuning processes. Latest concepts of photodetector design such as flexible, self‐powered, plasmonic, and piezophototronic photodetectors with novel properties are introduced to demonstrate the future directions of such an exciting research field. Recent advances of CdS nanoscale photodetectors with Ohmic contact, Schottky contact and MESFET configuration are summarized. Element doping, composition and bandgap engineering, heterojunction integration, and new design concepts in photodetectors are discussed. Future development directions are also discussed.
Bibliografie:ark:/67375/WNG-09B7HVXR-W
istex:6A80F2A1C0A4FFAFBE68583293BFCC8BA1F68010
ArticleID:ADMA201304621
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201304621