1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with...

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Veröffentlicht in:Optics express Jg. 24; H. 5; S. 4622
Hauptverfasser: Chen, H., Verheyen, P., De Heyn, P., Lepage, G., De Coster, J., Balakrishnan, S., Absil, P., Yao, W., Shen, L., Roelkens, G., Van Campenhout, J.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: United States 07.03.2016
ISSN:1094-4087, 1094-4087
Online-Zugang:Volltext
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Zusammenfassung:We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.
Bibliographie:ObjectType-Article-1
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ObjectType-Feature-2
content type line 23
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.24.004622