Excitons in a cylindrical GaAs Pöschl-Teller quantum dot

The exciton binding energy in a cylindrical quantum dot (QD) with Pöschl–Teller confining potential is studied with the use of the effective mass approximation and a variational calculation procedure. A GaAs prototype structure is particularly considered and both the spatially‐direct (DE) and spatia...

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Bibliographic Details
Published in:Physica Status Solidi (b) Vol. 248; no. 6; pp. 1412 - 1419
Main Authors: Mora-Ramos, M. E., Barseghyan, M. G., Duque, C. A.
Format: Journal Article
Language:English
Published: Berlin WILEY-VCH Verlag 01.06.2011
WILEY‐VCH Verlag
Wiley-VCH
Subjects:
Approximation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Confining
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Excitons
GaAs
Gallium arsenide
Gallium arsenides
Mathematical analysis
Physics
Quantum dots
Quantum wells
Quantum confinement
Gallium arsenides
Excitons
Variational methods
Quantum dots
Binding energy
Effective mass model
Cylindrical shape
Calculation methods
ISSN:0370-1972, 1521-3951, 1521-3951
Online Access:Get full text
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Summary:The exciton binding energy in a cylindrical quantum dot (QD) with Pöschl–Teller confining potential is studied with the use of the effective mass approximation and a variational calculation procedure. A GaAs prototype structure is particularly considered and both the spatially‐direct (DE) and spatially‐indirect (IE) exciton regimes are taken into account. We show that there is a significant effect of the Pöschl–Teller quantum well (QW) symmetry profile on the exciton properties in both configurations.
Bibliography:ark:/67375/WNG-0K3TWDC8-C
istex:8D192BD56CCA6A44569C02D890607DB412761744
ArticleID:PSSB201046428
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0370-1972
1521-3951
1521-3951
DOI:10.1002/pssb.201046428